Electroluminescence and photoluminescence excitation study of asymmetric coupledGaAs∕AlxGa1−xAsV-groove quantum wires

AbstractQuantum Wires Structures Were Fabricated By Patterning Quantum Well Samples With Electron Beam Lithography And Various Wet Chemical Etching Procedures. Wire Structures With 800Å Wire Width Were Achieved By Wet Etching In Nh4Oh / H2O2 / H2O (20:7:973). These Samples Were Characterized By Scanning Electron Microscopy (Sem), Photoluminescence (Pl), And Polarization-Dependent Photoluminescence Excitation (Ple) Measurements. The Pl Spectra Show Significantly Strongpr Peaks Than That Taken From An En-Etched Quantum Well Sample. A Wire Width Of 400Å Was Estimated From The Blue Shift Of Pl Peaks. A 22% Anisotropy Was Observed From Polarization-Dependent Ple Spectra, Further Corroborating The Existence Of Two-Dimensional Quantum Confinement.

Download Full-text

Photoluminescence excitation spectra in GaAs/AlAs trench‐buried quantum wires with 20 nm wide rectangular cross‐sectional shapes

Applied Physics Letters ◽

10.1063/1.116717 ◽

1996 ◽

Vol 68 (3) ◽

pp. 364-366 ◽

Cited By ~ 10

Author(s):

T. Sogawa ◽

S. Ando ◽

H. Ando ◽

H. Kanbe

Keyword(s):

Quantum Wires ◽

Photoluminescence Excitation ◽

Excitation Spectra ◽

Cross Sectional ◽

20 Nm

Download Full-text

Photoluminescence excitation study of lateral-subband structure in barrier-modulatedIn0.09Ga0.91As quantum wires

Physical Review B ◽

10.1103/physrevb.49.5753 ◽

1994 ◽

Vol 49 (8) ◽

pp. 5753-5756 ◽

Cited By ~ 25

Author(s):

Ch. Gréus ◽

R. Spiegel ◽

P. A. Knipp ◽

T. L. Reinecke ◽

F. Faller ◽

...

Keyword(s):

Quantum Wires ◽

Photoluminescence Excitation ◽

Subband Structure

Download Full-text

Photoluminescence excitation spectra in T-shaped quantum wires

Postconference Digest Quantum Electronics and Laser Science, 2003. QELS. ◽

10.1109/qels.2003.237853 ◽

2003 ◽

Author(s):

H. Itoh ◽

Y. Hayamizu ◽

M. Yoshita ◽

H. Akiyama ◽

K.W. West ◽

...

Keyword(s):

Quantum Wires ◽

Photoluminescence Excitation ◽

Excitation Spectra

Download Full-text

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138592 ◽

1995 ◽

Vol 53 ◽

pp. 444-445

Author(s):

S. Hillyard ◽

Y.-P. Chen ◽

J.D. Reed ◽

W.J. Schaff ◽

L.F. Eastman ◽

...

Keyword(s):

Electron Diffraction ◽

Semiconductor Lasers ◽

Quantum Wire ◽

Quantum Wires ◽

Convergent Beam Electron Diffraction ◽

Zero Order ◽

Beam Electron ◽

Local Lattice ◽

Device Applications ◽

Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

Download Full-text

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100171419 ◽

1994 ◽

Vol 52 ◽

pp. 736-737

Author(s):

A. Carlsson ◽

J.-O. Malm ◽

A. Gustafsson

Keyword(s):

Quantum Well ◽

Quantum Wells ◽

Quantum Wires ◽

Vapour Phase ◽

Quantitative Information ◽

Lattice Imaging ◽

Vapour Phase Epitaxy ◽

Metalorganic Vapour Phase Epitaxy ◽

High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

Download Full-text