The conductance of a suspended quantum point contact fabricated from GaAs/AlGaAs heterostructures with a two-dimensional electron gas, equipped with the in-plane side gates separated from the constriction using lithographical trenches, is studied. The conductance as a function of the gate voltages demonstrates unusual double-channel regime with independent channel’s conductance quantization: two side gates can drive the conductance of the separate channels independently. A possible electrostatic mechanism of the double-channel structure formation inside a single constriction is connected with the lateral redistribution of the low-mobility X-valley electrons contained in superlattice layers, resulting in the emergence of the potential barrier in the middle of quantum point contact, separating the conducting electrons into two channels, symmetrically shifted towards the lithographical trenches, defining the nanostructure geometry.
Gate-defined quantum point contact in an InSb two-dimensional electron gas
