An alternative proof of Kharitonov's theorem

1989 ◽  
Vol 34 (4) ◽  
pp. 448-450 ◽  
Author(s):  
H. Chapellat ◽  
S.P. Bhattacharyya
1988 ◽  
Vol 11 (5) ◽  
pp. 381-384 ◽  
Author(s):  
Soura Dasgupta

Electronics ◽  
2019 ◽  
Vol 8 (2) ◽  
pp. 245
Author(s):  
Tongkai Cui ◽  
Qishuang Ma ◽  
Ping Xu

The rapid switching action of power metal-oxide-semiconductor field-effect transistor (MOSFET) causes high-level electromagnetic interference (EMI) in power converters. The switching transient waveform modification method realized by closed-loop gate drive has been recognized as an effective high-frequency EMI reduction approach. However, feedback control of power MOSFET in the saturation region would introduce stability problems. This paper presents a sufficient condition-based stability analysis of all the operating points during turn-off using Kharitonov’s theorem. Firstly, a small-signal MOSFET model during turn-off was used to derive the closed-loop system transfer function. The nonlinear capacitances and the rest constant parameters of the small-signal model were determined based on the device characteristics and the expected outcome of the drain-source voltage. Then we split the turn-off switching transient into several subintervals, during which the system characteristic equation became an interval polynomial due to the nonlinear capacitances. Finally, Kharitonov’s theorem was applied in each subinterval to evaluate the stability, thereby achieving the overall system stability analysis during turn-off. Experiments were conducted to investigate the system’s stability and the results confirmed the validity of the proposed analysis. This work presents an implementable design guideline for the applied switching transient waveform modification of power converters via closed-loop gate drive.


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