A High Efficiency 4–18 GHz GaN MMIC Power Amplifier based on 90nm T-gate GaN HEMT Technology

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts48439.2020.9392935 ◽

2020 ◽

Author(s):

Shuoqi Chen ◽

Vipan Kumar ◽

Yu Cao

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

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A High-Efficiency Class F MMIC Power Amplifier at 4.0 GHz Using AlGaN/GaN HEMT Technology

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ◽

10.1109/csics.2012.6340065 ◽

2012 ◽

Author(s):

Valiallah Zomorrodian ◽

Umesh K. Mishra ◽

Robert A. York

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Gan Hemt ◽

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Wideband High Efficiency 50 W GaN-HEMT Balanced Power Amplifier

2018 48th European Microwave Conference (EuMC) ◽

10.23919/eumc.2018.8541379 ◽

2018 ◽

Author(s):

Quang Huy Le ◽

Gernot Zimmer

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

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Extraction of accurate GaN HEMT model for high-efficiency power amplifier design

2015 IEEE MTT-S International Microwave Symposium ◽

10.1109/mwsym.2015.7166866 ◽

2015 ◽

Author(s):

Valeria Vadala ◽

Antonio Raffo ◽

Gustavo Avolio ◽

Mauro Marchetti ◽

Dominique M.M.-P Schreurs ◽

...

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Gan Hemt ◽

Amplifier Design

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A Dual-Band High Efficiency Class-F GaN HEMT Power Amplifier for Wireless Communication

IETE Journal of Research ◽

10.1080/03772063.2019.1619486 ◽

2019 ◽

pp. 1-8

Author(s):

Sh. Rezaei Borjlu ◽

M. S. Khadem

Keyword(s):

Wireless Communication ◽

Power Amplifier ◽

High Efficiency ◽

Dual Band ◽

Gan Hemt ◽

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C-Ku band 120% relative bandwidth high efficiency high power amplifier using GaN HEMT

2009 Asia Pacific Microwave Conference ◽

10.1109/apmc.2009.5384324 ◽

2009 ◽

Author(s):

Eigo Kuwata ◽

Koji Yamanaka ◽

Tasuku Kirikoshi ◽

Akira Inoue ◽

Yoshihito Hirano

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Gan Hemt ◽

High Power Amplifier ◽

Relative Bandwidth ◽

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Nonlinear Electrothermal GaN HEMT Model Applied to High-Efficiency Power Amplifier Design

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2012.2229712 ◽

2013 ◽

Vol 61 (1) ◽

pp. 444-454 ◽

Author(s):

Justin B. King ◽

Thomas J. Brazil

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Gan Hemt ◽

Amplifier Design

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GaN HEMT based class-F power amplifier with broad bandwidth and high efficiency

2016 International Conference on Integrated Circuits and Microsystems (ICICM) ◽

10.1109/icam.2016.7813578 ◽

2016 ◽

Author(s):

Mustazar Iqbal ◽

Anna Piacibello

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Broad Bandwidth ◽

Gan Hemt ◽

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5.65 GHz High-Efficiency GaN HEMT Power Amplifier With Harmonics Treatment up to Fourth Order

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2012.2197385 ◽

2012 ◽

Vol 22 (6) ◽

pp. 315-317 ◽

Author(s):

M. Kamiyama ◽

R. Ishikawa ◽

K. Honjo

Keyword(s):

Power Amplifier ◽

Fourth Order ◽

High Efficiency ◽

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A high‐efficiency design for 2.0‐2.9 GHz 5‐W GaN HEMT Class‐E power amplifier using passive Q‐constant non‐Foster network

Microwave and Optical Technology Letters ◽

10.1002/mop.32068 ◽

2019 ◽

Vol 62 (2) ◽

pp. 615-624 ◽

Author(s):

Dang‐An Nguyen ◽

Chulhun Seo ◽

Kwang S. Park

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Gan Hemt ◽

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A Ka-Band High Efficiency Doherty Power Amplifier MMIC using GaN-HEMT for 5G Application

2018 IEEE MTT-S International Microwave Workshop Series on 5G Hardware and System Technologies (IMWS-5G) ◽

10.1109/imws-5g.2018.8484612 ◽

2018 ◽

Author(s):

Keigo Nakatani ◽

Yutaro Yamaguchi ◽

Yuji Komatsuzaki ◽

Shuichi Sakata ◽

Shintaro Shinjo ◽

...

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Ka Band ◽

Gan Hemt ◽

Doherty Power Amplifier

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