A High-Efficiency Class F MMIC Power Amplifier at 4.0 GHz Using AlGaN/GaN HEMT Technology

2012 ◽  
Author(s):  
Valiallah Zomorrodian ◽  
Umesh K. Mishra ◽  
Robert A. York
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Gan Hemt ◽  
Class F

Design of high efficiency GaN HEMT class-F power amplifier at S-band

2014 ◽  
Author(s):  
Ying Wang ◽  
Shiwei Dong ◽  
Lisheng Yang ◽  
Zhengjun Li ◽  
Yazhou Dong ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Gan Hemt ◽  
Class F

A high efficiency class-F power amplifier using AIGaN/GaN HEMT

2006 ◽  
Vol 48 (10) ◽  
pp. 1955-1957 ◽  
Author(s):  
Sangwon Ko ◽  
Wenhsing Wu ◽  
Jenshan Lin ◽  
Soohwan Jang ◽  
Fan Ren ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Gan Hemt ◽  
Class F

A high‐efficiency inverse class‐F power amplifier using GaN HEMT

2008 ◽  
Vol 50 (9) ◽  
pp. 2420-2422 ◽  
Author(s):  
Hyoungjong Kim ◽  
Gilwong Choi ◽  
Jinjoo Choi
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Gan Hemt ◽  
Class F

A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier

2011 ◽  
Vol E94-C (7) ◽  
pp. 1193-1198 ◽  
Author(s):  
Akihiro ANDO ◽  
Yoichiro TAKAYAMA ◽  
Tsuyoshi YOSHIDA ◽  
Ryo ISHIKAWA ◽  
Kazuhiko HONJO
Keyword(s):  
Power Amplifier ◽  
Average Power ◽  
Gan Hemt ◽  
Class F
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