Defect recognition via longitudinal mode analysis of high power broad area QW semiconductor lasers

2000 ◽  
Author(s):  
A. Klehr ◽  
G. Beister ◽  
G. Erbert ◽  
A. Klein ◽  
A. Knauer ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
High Power ◽  
Longitudinal Mode ◽  
Mode Analysis ◽  
Broad Area ◽  
Defect Recognition

Defect recognition via longitudinal mode analysis of high power fundamental mode and broad area edge emitting laser diodes

2001 ◽  
Vol 90 (1) ◽  
pp. 43-47 ◽  
Author(s):  
A. Klehr ◽  
G. Beister ◽  
G. Erbert ◽  
A. Klein ◽  
J. Maege ◽  
...  
Keyword(s):  
High Power ◽  
Fundamental Mode ◽  
Laser Diodes ◽  
Longitudinal Mode ◽  
Mode Analysis ◽  
Broad Area ◽  
Defect Recognition

Efficient coupling of dynamic electro-optical and heat-transport models for high-power broad-area semiconductor lasers

2019 ◽  
Vol 51 (3) ◽  
Author(s):  
Mindaugas Radziunas ◽  
Jürgen Fuhrmann ◽  
Anissa Zeghuzi ◽  
Hans-Jürgen Wünsche ◽  
Thomas Koprucki ◽  
...  
Keyword(s):  
Heat Transport ◽  
Semiconductor Lasers ◽  
High Power ◽  
Broad Area ◽  
Transport Models ◽  
Efficient Coupling

Time-Dependent Simulation of Thermal Lensing in High-Power Broad-Area Semiconductor Lasers

2019 ◽  
Vol 25 (6) ◽  
pp. 1-10 ◽  
Author(s):  
Anissa Zeghuzi ◽  
Hans-Jurgen Wunsche ◽  
Hans Wenzel ◽  
Mindaugas Radziunas ◽  
Jurgen Fuhrmann ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
High Power ◽  
Time Dependent ◽  
Thermal Lensing ◽  
Broad Area

scholarly journals Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
Christoph Doering ◽  
Henning Fouckhardt
Keyword(s):  
Semiconductor Lasers ◽  
High Frequency ◽  
Mode Selection ◽  
Longitudinal Mode ◽  
Pump Current ◽  
Transverse Mode ◽  
Mode Locking ◽  
Broad Area ◽  
Fourier Plane ◽  
Broad Area Lasers

Experimental results of the combination of transverse mode selection and active mode-locking with anti-reflection-coated broad area lasers (BALs) are presented. The BALs are subject to feedback from a free-space external Fourier-optical 4f-setup with a reflective spatial frequency filter in the Fourier-plane for transverse mode selection. Driving the BALs with a high frequency modulated pump current above threshold active longitudinal mode-locking is achieved. Pulse durations as low as 88 ps are obtained, while the Gaussian-like fundamental or a higher order transverse mode up to mode number 5 is selected on purpose. Pulse duration and shape are nearly independent of the selected transverse mode.

Stabilization of lateral mode transients in high-power broad area semiconductor lasers

2009 ◽  
Vol 94 (1) ◽  
pp. 011107 ◽  
Author(s):  
Chen Chen ◽  
Paul Leisher ◽  
Steve Patterson ◽  
Paul Crump ◽  
Yong Kwan Kim ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
High Power ◽  
Broad Area ◽  
Lateral Mode
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