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Very High Speed SiGe Heterojunction Bipolar Transistor Reliability Overview
2006 International Caribbean Conference on Devices, Circuits and Systems
◽
10.1109/iccdcs.2006.250849
◽
2006
◽
Cited By ~ 4
Author(s):
F. Guarin
◽
Z. Yang
◽
G. Freeman
Keyword(s):
High Speed
◽
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Transistor Reliability
◽
Very High
Download Full-text
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Cited By
References
Development of a Planar Heterojunction Bipolar Transistor for Very High Speed Logic.
10.21236/ada150374
◽
1984
◽
Author(s):
S. I. Long
Keyword(s):
High Speed
◽
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Planar Heterojunction
◽
Very High
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Development of a Planar Heterojunction Bipolar Transistor for Very High Speed Logic.
10.21236/ada136341
◽
1983
◽
Author(s):
S. I. Long
Keyword(s):
High Speed
◽
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Planar Heterojunction
◽
Very High
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Development of a Planar Heterojunction Bipolar Transistor for Very High Speed Logic.
10.21236/ada174580
◽
1986
◽
Author(s):
Stephen I. Long
◽
Herbert Kroemer
◽
M. A. Rao
Keyword(s):
High Speed
◽
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Planar Heterojunction
◽
Very High
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Effect of base thickness reduction on high speed characteristics and base resistance of InGaAs/InP heterojunction bipolar transistor
International Conference onIndium Phosphide and Related Materials, 2003.
◽
10.1109/iciprm.2003.1205331
◽
2003
◽
Cited By ~ 1
Author(s):
M. Kahn
◽
S. Blayac
◽
M. Riet
◽
P. Berdaguer
◽
V. Dhalluin
◽
...
Keyword(s):
High Speed
◽
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Thickness Reduction
◽
Base Thickness
◽
Base Resistance
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An SiGe heterojunction bipolar transistor with very high open-base breakdown voltage
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
◽
10.1109/bctm.2014.6981280
◽
2014
◽
Cited By ~ 2
Author(s):
T. V. Dinh
◽
T. Vanhoucke
◽
A. Heringa
◽
M. Al-Sa'di
◽
P. Ivo
◽
...
Keyword(s):
Breakdown Voltage
◽
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Very High
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Very high gain AlGaAs/GaAs pnp heterojunction bipolar transistor
Electronics Letters
◽
10.1049/el:19890699
◽
1989
◽
Vol 25
(16)
◽
pp. 1047
◽
Cited By ~ 7
Author(s):
F.E. Najjar
◽
P.M. Enquist
◽
D.B. Slater
◽
M.Y. Chen
◽
K.J. Linden
Keyword(s):
High Gain
◽
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Very High
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Improved heterojunction bipolar transistor reliability with carbon‐doped base
Applied Physics Letters
◽
10.1063/1.116540
◽
1996
◽
Vol 68
(6)
◽
pp. 809-811
◽
Cited By ~ 6
Author(s):
Guan‐Wu Wang
Keyword(s):
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Carbon Doped
◽
Transistor Reliability
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High-speed InP/lnGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers
Journal of Electronic Materials
◽
10.1007/bf02655589
◽
1996
◽
Vol 25
(10)
◽
pp. 1637-1639
Author(s):
M. T. Fresina
◽
D. A. Ahmaki
◽
S. Thomas
◽
D. W. Barlage
◽
C. A. Martino
◽
...
Keyword(s):
High Speed
◽
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
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Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy
Electronics Letters
◽
10.1049/el:19920853
◽
1992
◽
Vol 28
(14)
◽
pp. 1344
◽
Cited By ~ 25
Author(s):
J.L. Benchimol
◽
F. Alexandre
◽
C. Dubon-Chevallier
◽
F. Héliot
◽
R. Bourguiga
◽
...
Keyword(s):
High Gain
◽
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Chemical Beam Epitaxy
◽
Carbon Doped
◽
Very High
Download Full-text
High-speed InGaAsSb/InP double heterojunction bipolar transistor with composition graded base and InAs emitter contact layers
Journal of Crystal Growth
◽
10.1016/j.jcrysgro.2006.11.143
◽
2007
◽
Vol 301-302
◽
pp. 1005-1008
◽
Cited By ~ 13
Author(s):
Bing-Ruey Wu
◽
William Snodgrass
◽
Milton Feng
◽
K.Y. Cheng
Keyword(s):
High Speed
◽
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Double Heterojunction
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