Effect of base thickness reduction on high speed characteristics and base resistance of InGaAs/InP heterojunction bipolar transistor

2003 ◽  
Author(s):  
M. Kahn ◽  
S. Blayac ◽  
M. Riet ◽  
P. Berdaguer ◽  
V. Dhalluin ◽  
...  
Keyword(s):  
High Speed ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Thickness Reduction ◽  
Base Thickness ◽  
Base Resistance

scholarly journals 300°C GaN/AlGaN Heterojunction Bipolar Transistor

1998 ◽  
Vol 3 ◽  
Author(s):  
Fan Ren ◽  
Cammy R. Abernathy ◽  
J. M. Van Hove ◽  
P. P. Chow ◽  
R. Hickman ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Hole Concentration ◽  
Dry Etching ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Base Resistance

A GaN/AlGaN heterojunction bipolar transistor has been fabricated using Cl2/Ar dry etching for mesa formation. As the hole concentration increases due to more efficient ionization of the Mg acceptors at elevated temperatures (> 250°C), the device shows improved gain. Future efforts should focus on methods for reducing base resistance, which are briefly summarized.

High-speed InP/lnGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers

1996 ◽  
Vol 25 (10) ◽  
pp. 1637-1639
Author(s):  
M. T. Fresina ◽  
D. A. Ahmaki ◽  
S. Thomas ◽  
D. W. Barlage ◽  
C. A. Martino ◽  
...  
Keyword(s):  
High Speed ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

HBT ICs FOR OC-192 EQUIPMENT

1998 ◽  
Vol 09 (02) ◽  
pp. 549-566
Author(s):  
JOHN SITCH ◽  
ROBERT SURRIDGE
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
New Technology ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Small Scale ◽  
Commercial Market ◽  
Fiber Communications

Heterojunction bipolar transistor (HBT) integrated circuits are just beginning to appear on the commercial market, mostly as small-scale microwave and broadband parts. The high-speed portion of Nortel's OC-192 fiber communications product makes extensive use of this new technology, and this article describes the rationale for using HBT ICs in such a system, and the philosophy behind HBT IC introduction.

Ultrashort SiGe Heterojunction Bipolar Transistor-Based High-Speed Optical Modulator

2013 ◽  
Vol 19 (2) ◽  
pp. 7900109-7900109 ◽  
Author(s):  
Pengfei Wu ◽  
R. E. Clarke ◽  
J. Novak ◽  
Shengling Deng ◽  
J. F. McDonald ◽  
...  
Keyword(s):  
High Speed ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Optical Modulator

scholarly journals Ultra High Speed Heterojunction Bipolar Transistor Technology

2000 ◽  
Author(s):  
Mark Rodwell ◽  
M. Urtega ◽  
D. Scott ◽  
M. Dahlstrom ◽  
Y. Betser
Keyword(s):  
High Speed ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Ultra High Speed
Sign in / Sign up

Export Citation Format

Share Document