Electrical characterization of synthetic ester liquid over wide temperature range (−60°C / 200°C)

2017 ◽  
Author(s):  
J. Muslim ◽  
R. Hanna ◽  
O. Lesaint ◽  
J. L. Reboud ◽  
N. I. Sinisuka
Keyword(s):  
Wide Temperature Range ◽  
Electrical Characterization ◽  
Temperature Range ◽  
Synthetic Ester

Electrical characterization of current conduction in Au/TiO2/n-Si at wide temperature range

2009 ◽  
Vol 12 (6) ◽  
pp. 224-232 ◽  
Author(s):  
H. Altuntas ◽  
A. Bengi ◽  
U. Aydemir ◽  
T. Asar ◽  
S.S. Cetin ◽  
...  
Keyword(s):  
Wide Temperature Range ◽  
Electrical Characterization ◽  
Temperature Range ◽  
Current Conduction

Characterization of CsI:Tl at a wide temperature range (−40°C to +22°C)

2013 ◽  
Vol 707 ◽  
pp. 73-79 ◽  
Author(s):  
M. Grodzicka ◽  
M. Moszyński ◽  
T. Szczęśniak ◽  
W. Czarnacki ◽  
M. Szawłowski ◽  
...  
Keyword(s):  
Wide Temperature Range ◽  
Temperature Range

scholarly journals Electrical Characterization of La2-xSrxCuO4-y Superconductors

1989 ◽  
Vol 44 (1) ◽  
pp. 26-28 ◽  
Author(s):  
G. Chiodelli ◽  
G. Campari-Viganò ◽  
V. Massarotti ◽  
G. Flor
Keyword(s):  
Electrical Resistivity ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Solid Solutions ◽  
Electrical Characterization ◽  
Superconducting Transition ◽  
Electrical Behaviour ◽  
Temperature Range

Abstract The electrical behaviour of La2-xSrxCuO4-y solid solutions (with x = 0, x = 0.025, x = 0.05, and x = 0.15) at temperatures between 10 and 900 K and under different oxygen partial pressure pO2 = 1 ÷ 10-6 atm) has been investigated. The samples prepared and measured under an O2 flux (i.e., with y = 0) show a superconducting transition with Tc = 46, 29. 37 K for x = 0. 0.05 and 0.15, respectively. The samples with x = 0.025, y = 0, and x = 0, y ≠ 0 exhibit no sign of superconductivity. In the temperature range 100-900 K. La2CuO4 is semiconducting, whereas the electrical resistivity is independent of temperature for the x =0.025 sample, and the x = 0.05 and x = 0.15 are metallic.

Electrical Characteristics of GaAs Implanted with High Energy (100 MeV) 28Si and 120Sn Ions

2014 ◽  
Vol 661 ◽  
pp. 3-7
Author(s):  
Yousuf Pyar Ali ◽  
Arun M. Narsale ◽  
Brij Mohan Arora
Keyword(s):  
Electrical Conduction ◽  
Conduction Mechanism ◽  
Electrical Characterization ◽  
High Energy ◽  
The Other ◽  
Electrical Characteristics ◽  
Defect States ◽  
Temperature Range ◽  
Current Voltage

In this work we carried out electrical characterization of n-GaAs implanted at 300 K with high energy (100 MeV)28Si and120Sn ions to a fluence of 1x1018ions/m2using current–voltage (I-V) measurements. The as implanted samples and samples annealed in the temperature range 373-1123 K have been investigated. Resistance of the samples obtained from I-V curves recorded over the temperature range 110K-270K indicate that the samples implanted with28Si and annealed up to 623 K and the samples implanted with120Sn and annealed up to 723K shows tunnel assisted hoping conduction mechanism. In the other hand,28Si implanted samples annealed to 723K and 823K and120Sn implanted samples annealed to 823K and 923K the electrical conduction mechanism is dominated by thermal hoping between closed defect states.

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