Recently we have observed the structure images of silicon in the (110), (111) and (100) projection respectively, and then examined the optimum defocus and thickness ranges for the formation of such images on the basis of calculations of image contrasts using the n-slice theory. The present paper reports the effects of a chromatic aberration and a slight misorientation on the images, and also presents some applications of structure images of Si, Ge and MoS2 to the radiation damage studies.(1) Effect of a chromatic aberration and slight misorientation: There is an inevitable fluctuation in the amount of defocus due to a chromatic aberration originating from the fluctuations both in the energies of electrons and in the magnetic lens current. The actual image is a results of superposition of those fluctuated images during the exposure time. Assuming the Gaussian distribution for defocus, Δf around the optimum defocus value Δf0, the intensity distribution, I(x,y) in the image formed by this fluctuation is given by
Raman sideband cooling in optical tweezer arrays for Rydberg dressing
