Analysis on the Characteristics of Dynamic Changes in Junction Temperature of Power Semiconductor Devices

Mapping Intimacies ◽

10.1109/icpre52634.2021.9635439 ◽

2021 ◽

Author(s):

Guoqing Xu ◽

Weiwei Wei ◽

Tao Liu ◽

Huiyun Li ◽

Xiang Wang

Keyword(s):

Semiconductor Devices ◽

Junction Temperature ◽

Dynamic Changes ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Junction Temperature Control Strategy for Lifetime Extension of Power Semiconductor Devices

2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe) ◽

10.23919/epe20ecceeurope43536.2020.9215718 ◽

2020 ◽

Author(s):

Johannes Ruthardt ◽

Hendrik Schulte ◽

Philipp Ziegler ◽

Manuel Fischer ◽

Maximilian Nitzsche ◽

...

Keyword(s):

Temperature Control ◽

Control Strategy ◽

Semiconductor Devices ◽

Junction Temperature ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Lifetime Extension

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Power loss and junction temperature analysis of power semiconductor devices

Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370) ◽

10.1109/ias.1999.800030 ◽

2003 ◽

Author(s):

Dewei Xu ◽

Haiwei Lu ◽

Lipei Huang ◽

S. Azuma ◽

M. Kimata ◽

...

Keyword(s):

Semiconductor Devices ◽

Junction Temperature ◽

Temperature Analysis ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Online Junction Temperature Monitoring of Power Semiconductor Devices Based on a Wheatstone Bridge

10.1109/ecce47101.2021.9595774 ◽

2021 ◽

Author(s):

Niklas Fritz ◽

Maximilian Friedel ◽

Rik W. De Doncker ◽

Timothy A. Polom

Keyword(s):

Semiconductor Devices ◽

Wheatstone Bridge ◽

Temperature Monitoring ◽

Junction Temperature ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Power loss and junction temperature analysis of power semiconductor devices

IEEE Transactions on Industry Applications ◽

10.1109/tia.2002.802995 ◽

2002 ◽

Vol 38 (5) ◽

pp. 1426-1431 ◽

Author(s):

Dewei Xu ◽

Haiwei Lu ◽

Lipei Huang ◽

S. Azuma ◽

M. Kimata ◽

...

Keyword(s):

Semiconductor Devices ◽

Junction Temperature ◽

Temperature Analysis ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Method for obtaining junction temperature of power semiconductor devices combining computational fluid dynamics and thermal network

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/j.nima.2020.164260 ◽

2020 ◽

Vol 976 ◽

pp. 164260

Author(s):

Lisha Peng ◽

Wanzeng Shen ◽

Anhui Feng ◽

Yan Liu ◽

Daqing Gao ◽

...

Keyword(s):

Fluid Dynamics ◽

Computational Fluid Dynamics ◽

Semiconductor Devices ◽

Junction Temperature ◽

Power Semiconductor ◽

Thermal Network ◽

Power Semiconductor Devices

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Research on the power loss and junction temperature of power semiconductor devices for inverter

Proceedings of the IEEE International Vehicle Electronics Conference (IVEC'99) (Cat. No.99EX257) ◽

10.1109/ivec.1999.830658 ◽

2003 ◽

Author(s):

S. Azuma ◽

M. Kimata ◽

M. Seto ◽

Xinjian Jiang ◽

Haiwei Lu ◽

...

Keyword(s):

Semiconductor Devices ◽

Junction Temperature ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Preface to the Special Issue on ^|^ldquo;Current Technologies and Applications on Power Semiconductor Devices ^|^mdash;Silicon and Wide Bandgap Semiconductors^|^mdash;^|^rdquo;

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.130.911 ◽

2010 ◽

Vol 130 (6) ◽

pp. 911-911

Author(s):

Mutsuhiro Mori

Keyword(s):

Semiconductor Devices ◽

Wide Bandgap ◽

Special Issue ◽

Wide Bandgap Semiconductors ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Bandgap Semiconductors

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Residual Voids in Degassing Process of Encapsulation Gel for Power Semiconductor Devices

IEEJ Transactions on Fundamentals and Materials ◽

10.1541/ieejfms.134.432 ◽

2014 ◽

Vol 134 (6) ◽

pp. 432-433

Author(s):

Masahiro Sato ◽

Akiko Kumada ◽

Kunihiko Hidaka ◽

Keisuke Yamashiro ◽

Yuji Hayase ◽

...

Keyword(s):

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Introduction: Applications Roadmap of GaN Power Semiconductor Devices

The Journal of the Institute of Electrical Engineers of Japan ◽

10.1541/ieejjournal.139.76 ◽

2019 ◽

Vol 139 (2) ◽

pp. 76-79

Author(s):

Masayoshi YAMAMOTO

Keyword(s):

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Laser synthesized silicon carbide power semiconductor devices

International Congress on Applications of Lasers & Electro-Optics ◽

10.2351/1.5059204 ◽

1998 ◽

Author(s):

Nathaniel R. Quick

Keyword(s):

Silicon Carbide ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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