Ab-initio simulation of hydrogenated graphene properties

Ab-initio simulation of hydrogenated graphene properties was performed. At present, graphene is considered one of the most promising materials for the formation of new semiconductor devices with good characteristics. Graphene has been the subject of many recent investigations due to its peculiar transport, mechanical and others properties [1]. The chemical modification of graphene named as graphane has recently entered the investigation as a possible candidate to solve problems connected with the lack of a graphene bandgap. Graphane is a compound material consisting of two-dimensional graphene bonded by some atoms of hydrogen. The investigation shows that graphane has the three valley Г-М-K band structure with the Г valley, which has the smallest energy gap between the conductivity zone and the valence zone. The calculation of relative electron masses and non-parabolic coefficients in Г, М and K valleys was performed. Based on the obtained characteristics, it is possible to implement a statistical multi-particle Monte Carlo method to determine the characteristics of electron transfer in heterostructure semiconductor devices. A research on modified graphene structures is important for fundamental science and technological applications in high-speed transistor structures operating in the microwave and very high frequency ranges.

ON THE QUALITATIVE QUALITATIVE CHARACTERISTICS OF THE RESULT OF GROUPING ELECTRIC RADIO PRODUCTS INTO HOMOGENEOUS GROUPS

В работе представлен подход к определению меры однородности набора элементов - электрорадиоизделий, основанный на введении двух понятий: характеристики качества деления набора на группы и области качественного деления, как области значений характеристик качества деления, соответствующего разделению набора на однородные группы. This work presents an approach for determination of the homogeneity in a set of elements (semiconductor devices) based on the introducing two concepts: characteristic of the quality of dividing a set into groups and an area of qualitative division, as the range of values of characteristics of the quality of dividing, corresponding to dividing a set into homogeneous groups.

PROGRAMMABLE HIGH VOLTAGE SOURCE FOR PARAMETER MONITORING SEMICONDUCTOR DEVICES

The scheme of the device for automated control of a number of parameters of high-voltage diodes and transistors is proposed. Computer modeling has confirmed the claimed characteristics of the device.

EFFECT OF PASSIVATING COATINGS ON METALLIZATION TOPOLOGY IN PRODUCTION OF SEMICONDUCTOR DEVICES

The surface quality of the metallized contact pads on the crystal plays an important role in the production of semiconductor devices. This paper presents experimental studies of the effect of a protective passivation film of silicon oxide on the surface structure of aluminum metallization in the field of forming contact pads. Plasma chemical deposition of passivation layer SiO2 from gas phase (PECVD method) was carried out on prepared samples of silicon with aluminum metallization using a high-frequency power source with a frequency of 13.56 MHz. After that, chemical etching of precipitated silicon oxide was carried out to simulate the process of forming contact areas of semiconductor device crystals. The resistance of the metallization surface to plasma processes was studied by raster electron microscopy. It is shown that as a result of the process cycle, defects of the dislocation type are generated in the applied film Al. The nature of the observed defects has been found to be different. The revealed large square-shaped pits with a size of ~ 1 μm at the places where dislocations come to the surface are of a single nature and appear independently of the processes of applying passivation coatings, which is determined by the orienting action of a single-crystal substrate having some low dislocation density. While the second type of defects, shown by the presence of etching pits measuring ~ 100-300 nm, is characterized by a higher surface density. Moreover, the exclusion of the passivation process with silicon oxide did not lead to the appearance of this type of defects, which determined their nature associated with the ion bombardment of the Al layer during the plasma chemical deposition of silicon oxide from the gas phase. It is also shown that a feature of this type of defects is their disorientation both with respect to the first type of defects and with respect to each other. Detection of the structure of the metallization layers was carried out by X-ray diffraction, the results of which show the polycrystallinity of the formed aluminum metallization. The preferred orientation of the aluminum film corresponds to the substrate Si (111).

Analysing Efficiency and Reliability of High Speed Drive Inverters using Wide Band Gap Power Devices

Within the project ‘ARIEL’ an electrical turbo compressor unit for fuel cell applications is deeply investigated. The necessary drive inverter is especially designed for high fundamental frequency and high switching frequency to cope with the requirements of the implemented electrical machine. This paper presents investigations on the inverter’s efficiency and its prospective lifetime at different stages of the development. In the design process different wide band gap power semiconductor devices in discrete packages are evaluated in terms of the achievable power density and efficiency, both by simulations and measurements. Finally, an optimised design using surface mount silicon carbide MOSFETs is developed. Compared to a former inverter design using silicon devices in a three-level topology, the power density of the inverter is significantly increased. The lifetime of power electronic systems is often limited by the lifetime of the power semiconductor devices. Based on loss calculations and the resulting temperature swing of the virtual junction the lifetime of the inverter is estimated for the most frequent operating points and for different mission profiles.