ABSTRACTWe have realized color sensors based on vertically integrated thin film structures to overcome color moiré or color aliasing effects. The complete color information of the color aliasing free sensors can be detected at the same position of a sensor array without optical filters. The color separation is realized by the wavelength dependent absorption of amorphous silicon and its alloys. The sensors consist of three amorphous silicon pin diodes. The spectral sensitivity of the sensors can be controlled by the optical and optoelectronic properties of the materials on one hand and the design of the devices on the other hand. In order to investigate the optical wave propagation within the device and to optimize the color separation we have developed an analytical optical model, which takes the optical properties of the materials and the device design into account. The optical model has been combined with a colorimetrical model, which facilitates the benchmarking of the color sensors and the reduction of the color error of the sensors. The analytical colorimetric/optical model and an improved device design will be presented.
Input-level-dependent approach to color error diffusion
