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A Wideband Low Noise Amplifier With 4 kV HBM ESD Protection in 65 nm RF CMOS
IEEE Microwave and Wireless Components Letters
◽
10.1109/lmwc.2009.2032019
◽
2009
◽
Vol 19
(11)
◽
pp. 734-736
◽
Cited By ~ 20
Author(s):
Ming-Hsien Tsai
◽
S.S.H. Hsu
◽
Fu-Lung Hsueh
◽
Chewn-Pu Jou
◽
Sean Chen
◽
...
Keyword(s):
Low Noise
◽
Low Noise Amplifier
◽
Rf Cmos
◽
Esd Protection
◽
Noise Amplifier
Download Full-text
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A 24-GHz low-noise amplifier co-designed with ESD protection using junction varactors in 65-nm RF CMOS
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10.1109/mwsym.2011.5972579
◽
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A V-band low-noise amplifier with 5.3-dB NF and over 8-kV ESD protection in 65-nm RF CMOS
2012 IEEE/MTT-S International Microwave Symposium Digest
◽
10.1109/mwsym.2012.6259515
◽
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◽
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An integrated 5 GHz low-noise amplifier with 5.5 kv HBM ESD protection in 90 nm RF CMOS
Digest of Technical Papers. 2005 Symposium on VLSI Circuits, 2005.
◽
10.1109/vlsic.2005.1469340
◽
2005
◽
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Author(s):
D. Linten
◽
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◽
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◽
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◽
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◽
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Low Noise Amplifier
◽
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A 24-GHz low-noise amplifier co-designed with ESD protection using junction varactors in 65-nm RF CMOS
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◽
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◽
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◽
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A 3.1–4.8 GHz ultra wideband low noise amplifier with robust full ESD protection in CMOS
2010 IEEE International Conference on Ultra-Wideband
◽
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◽
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◽
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◽
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◽
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◽
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◽
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◽
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◽
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Design of inductively degenerated common source RF CMOS Low Noise Amplifier
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◽
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◽
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◽
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◽
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◽
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◽
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2011 IEEE International Conference on IC Design & Technology
◽
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◽
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◽
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◽
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A 2-decades Wideband Low-Noise Amplifier with High Gain and ESD Protection
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◽
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◽
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◽
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◽
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◽
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◽
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A CMOS variable gain low-noise amplifier with ESD protection for 5 GHz applications
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◽
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◽
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◽
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◽
pp. 055005
Author(s):
Zhang Hao
◽
Li Zhiqun
◽
Wang Zhigong
◽
Zhang Li
◽
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◽
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◽
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◽
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Ku-band low noise amplifier with using short-stub ESD protection
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003
◽
10.1109/rfic.2003.1214036
◽
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◽
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◽
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◽
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