A 0.8/2.4 GHz Tunable Active Band Pass Filter in InP/Si BiCMOS Technology

2014 ◽  
Vol 24 (1) ◽  
pp. 47-49 ◽  
Author(s):  
Zhiwei Xu ◽  
Julia McArdle-Moore ◽  
Thomas C. Oh ◽  
Samuel Kim ◽  
Steven T. W. Chen ◽  
...  
2013 ◽  
Vol 22 (03) ◽  
pp. 1350008 ◽  
Author(s):  
GORAN JOVANOVIĆ ◽  
DARKO MITIĆ ◽  
MILE STOJČEV ◽  
DRAGAN ANTIĆ

One approach to design self-tuning gm-C biquad band-pass filter is considered in this paper. The phase control loop is introduced to force filter central frequency to be equal to input signal frequency what is achieved by adjusting the amplifier transconductance gm. Thanks to that, the filter is robust to parameter perturbations and it can be used as a selective amplifier. In the full tuning range, it has a constant maximum gain at central frequency as well as a constant bandwidth. The 0.25 μm SiGe BiCMOS technology was used during design and verification of the band-pass filter. The filter has 26 dB gain, quality factor Q = 20 and central frequency up to 150 MHz. Simulation results indicate that the total in-band noise is 59 μV rms , the output third intercept point OIP3 = 4.36 dB and the dynamic range is 35 dB. Maximal power consumption at 3 V power supply is 1.115 mW.


2016 ◽  
Vol 86 (3) ◽  
pp. 1711-1723 ◽  
Author(s):  
Bocheng Bao ◽  
Tao Jiang ◽  
Quan Xu ◽  
Mo Chen ◽  
Huagan Wu ◽  
...  

Author(s):  
Darko Mitić ◽  
Goran Jovanović ◽  
Mile Stojčev ◽  
Dragan Antić

This paper considers design procedure of fast locking time self-tuning [Formula: see text] biquadratic band-pass filter with nonlinear sliding mode control. A sliding mode controller is building block of the phase control loop (PCL) involved to push central frequency to reach input signal frequency very fast, approximately 100–200[Formula: see text]ns. The sliding mode controller is realized by using a tunable delay line, enabling optimal filter locking time for different input signal frequencies. The filter possesses low sensitivity to component discrepancy and is applied as a selective amplifier. The 0.13[Formula: see text][Formula: see text]m SiGe BiCMOS technology has been utilized for design and verification of the presented filter. This filter has central frequency up to 220[Formula: see text]MHz, quality factor [Formula: see text] and 25[Formula: see text]dB gain.


Author(s):  
Zhiwei Xu ◽  
Deborah Winklea ◽  
Thomas C. Oh ◽  
Samuel Kim ◽  
Steven T. W. Chen ◽  
...  

Author(s):  
Asmae El Beqal ◽  
Loubna Kritele ◽  
Bachir Benhala ◽  
Izeddine Zorkani

2011 ◽  
Vol 1321 ◽  
Author(s):  
M. A. Vieira ◽  
M. Vieira ◽  
P. Louro ◽  
M. Fernandes ◽  
J. Costa ◽  
...  

ABSTRACTThis paper reports results on the use of a pi’n/pin a-SiC:H heterostructure as an active band-pass filter transfer function whose operation depends on the wavelength of the trigger light, on the applied voltage and on the wavelength of the additional optical bias.Results show that the device combines the demultiplexing operation with the simultaneous photodetection and self amplification of the signal. Experimental and simulated results show that the output signal has a strong nonlinear dependence on the light absorption profile. The device, modeled by a simple circuit with variable capacitors and interconnected phototransistors through a resistor, is a current-controlled device. It uses a changing capacitance to control the power delivered to the load acting as a state variable filter circuit. It combines the properties of active high-pass and low-pass filter sections into a capacitive active band-pass filter.


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