A 45% Drain Efficiency, -50dBc ACLR GaN HEMT Class-E Amplifier with DPD for W-CDMA Base Station

2006 IEEE MTT-S International Microwave Symposium Digest ◽

10.1109/mwsym.2006.249734 ◽

2006 ◽

Author(s):

Norihiko Ui ◽

Seigo Sano

Keyword(s):

Base Station ◽

Gan Hemt ◽

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A 40-W balanced GaN HEMT class-E power amplifier with 71% efficiency for WCDMA base station

Microwave and Optical Technology Letters ◽

10.1002/mop.24150 ◽

2009 ◽

Vol 51 (3) ◽

pp. 842-845 ◽

Author(s):

Yong-Sub Lee ◽

Mun-Woo Lee ◽

Yoon-Ha Jeong

Keyword(s):

Power Amplifier ◽

Base Station ◽

Gan Hemt ◽

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High-Power High-Efficiency GaN HEMT Doherty Amplifiers for Base Station Applications

IEICE Transactions on Electronics ◽

10.1587/transele.2021mmi0003 ◽

2021 ◽

Author(s):

Andrei GREBENNIKOV ◽

James WONG ◽

Hiroaki DEGUCHI

Keyword(s):

High Efficiency ◽

Base Station ◽

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Linearity-optimized class-E GaN HEMT Doherty amplifier

2008 Asia-Pacific Microwave Conference ◽

10.1109/apmc.2008.4957912 ◽

2008 ◽

Author(s):

Yong-Sub Lee ◽

Mun-Woo Lee ◽

Yoon-Ha Jeong

Keyword(s):

Gan Hemt ◽

Doherty Amplifier ◽

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3.5-GHz ultra-compact GaN class-E integrated Doherty MMIC PA for 5G massive-MIMO base station applications

2017 12th European Microwave Integrated Circuits Conference (EuMIC) ◽

10.23919/eumic.2017.8230693 ◽

2017 ◽

Author(s):

Stephan Maroldt ◽

Mariano Ercoli

Keyword(s):

Massive Mimo ◽

Base Station ◽

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Design and simulation of GaN HEMT balanced Class E power amplifier for WiMax applications

2011 XXXth URSI General Assembly and Scientific Symposium ◽

10.1109/ursigass.2011.6050570 ◽

2011 ◽

Author(s):

Oguzhan Kizilbey ◽

Osman Palamutcuogullari

Keyword(s):

Power Amplifier ◽

Gan Hemt ◽

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A 80W 2-stage GaN HEMT Doherty Amplifier with 50dBc ACLR, 42% Efficiency 32dB Gain with DPD for W-CDMA Base station

2007 IEEE/MTT-S International Microwave Symposium ◽

10.1109/mwsym.2007.380421 ◽

2007 ◽

Author(s):

Norihiko Ui ◽

Hiroaki Sano ◽

Seigo Sano

Keyword(s):

Base Station ◽

Gan Hemt ◽

Doherty Amplifier

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A 65 % drain efficiency GaN HEMT with 200 W peak power for 20 V to 65 V envelope tracking base station amplifier

2011 IEEE MTT-S International Microwave Symposium ◽

10.1109/mwsym.2011.5973481 ◽

2011 ◽

Author(s):

F. Yamaki ◽

K. Inoue ◽

N. Ui ◽

A. Kawano ◽

S. Sano

Keyword(s):

Base Station ◽

Envelope Tracking ◽

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High Power, High Efficiency, AlGaN/GaN HEMT Technology for Wireless Base Station Applications

IEEE MTT-S International Microwave Symposium Digest, 2005. ◽

10.1109/mwsym.2005.1516636 ◽

2006 ◽

Author(s):

R. Vetury ◽

Yun Wei ◽

D. Green ◽

S. Gibb ◽

T. Mercier ◽

...

Keyword(s):

High Efficiency ◽

Base Station ◽

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Design of a 2.6 GHz GaN-HEMT Doherty Power Amplifier IC for Small-Cell Base Station Systems

The Journal of Korean Institute of Electromagnetic Engineering and Science ◽

10.5515/kjkiees.2016.27.2.108 ◽

2016 ◽

Vol 27 (2) ◽

pp. 108-114

Author(s):

Hwiseob Lee ◽

Wonseob Lim ◽

Hyunuk Kang ◽

Wooseok Lee ◽

Hyoungjun Lee ◽

...

Keyword(s):

Power Amplifier ◽

Base Station ◽

Gan Hemt ◽

Doherty Power Amplifier ◽

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A high‐efficiency design for 2.0‐2.9 GHz 5‐W GaN HEMT Class‐E power amplifier using passive Q‐constant non‐Foster network

Microwave and Optical Technology Letters ◽

10.1002/mop.32068 ◽

2019 ◽

Vol 62 (2) ◽

pp. 615-624 ◽

Author(s):

Dang‐An Nguyen ◽

Chulhun Seo ◽

Kwang S. Park

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Gan Hemt ◽

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