Experimental and theoretical investigation of annealing effects on hetero-junction a-Si/c-Si solar cells

Author(s):  
Der-Chin Wu ◽  
Jui-Chung Shiao ◽  
Chien-Hsun Chen ◽  
Chao-Cheng Lin ◽  
Chien-Hsi Lin ◽  
...  
2006 ◽  
Vol 910 ◽  
Author(s):  
Wolfhard Beyer ◽  
H.F.W. Dekkers

AbstractThe microstructure of a-Si:N:H films, which are applied as antireflection coating and for defect passivation in multicrystalline silicon (mc-Si) solar cells, was studied by gas effusion experiments. The results show for as-deposited material of low substrate temperatures (TS = 200 – 300°C) a predominant diffusion of molecular hydrogen for temperatures up to 800°C in agreement with the presence of interconnected openings (voids). At higher substrate temperatures, the material has a more compact structure and atomic hydrogen is the dominant diffusing species in the accessible temperature range. Annealing effects were also studied. The results are consistent with the concept that atomic hydrogen released from the a-Si:N:H coating serves for defect passivation in μc-Si solar cells.


2001 ◽  
Vol 664 ◽  
Author(s):  
D. Carlson ◽  
G. Ganguly ◽  
G. Lin

ABSTRACTWe have recently observed that the initial performance of amorphous silicon (a-Si) solar cells can be improved by up to several % by annealing the cells at successively lower temperatures for successively longer times. For some devices, we also observed an improvement in performance after light soaking that was statistically significant. We have also observed an improvement in the stabilized performance of cells that were subjected to reverse bias annealing after light soaking. This effect was clearly evident in single-junction p-i-n cells with amorphous silicon-carbon (a-SiC) i-layers where the density of metastable centers is very high (> 1018cm-3). When we light-soaked a-SiC cells and then subjected them to low-temperature reverse bias annealing, they exhibited clear evidence of improved short-wavelength response after a second light soaking. These annealing effects are explained in terms of hydrogen motion within the a-Si network and within microvoids.


1981 ◽  
Vol 42 (C4) ◽  
pp. C4-1155-C4-1164 ◽  
Author(s):  
Y. Kuwano ◽  
M. Ohnishi
Keyword(s):  

Author(s):  
Vishal Mehta ◽  
Bhushan Sopori ◽  
Przemyslaw Rupnowski ◽  
Helio Moutinho ◽  
Aziz Shaikh ◽  
...  

2020 ◽  
Vol 12 (3) ◽  
pp. 03002-1-03002-5
Author(s):  
M. W. Bouabdelli ◽  
◽  
F. Rogti ◽  
N. Lakhdar ◽  
M. Maache ◽  
...  

2020 ◽  
Vol 10 (5) ◽  
pp. 1283-1289
Author(s):  
George C. Wilkes ◽  
Ajay D. Upadhyaya ◽  
Ajeet Rohatgi ◽  
Mool C. Gupta

Author(s):  
H. Hashiguchi ◽  
T. Tachibana ◽  
M. Aoki ◽  
T. Kojima ◽  
Y. Ohshita ◽  
...  
Keyword(s):  

Solar Energy ◽  
2021 ◽  
Vol 220 ◽  
pp. 211-216
Author(s):  
H.P. Yin ◽  
W.S. Tang ◽  
J.B. Zhang ◽  
W. Shan ◽  
X.M. Huang ◽  
...  

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