Low-Temperature Annealing of CdZnTeSe under Bias

We performed a gradual low-temperature annealing up to 360 K on a CdZnTeSe radiation detector equipped with gold and indium electrodes under bias at both polarities. We observed significant changes in the detector’s resistance and space-charge accumulation. This could potentially lead to the control and improvement of the electronic properties of the detector because the changes are accompanied with the reduction in the bulk dark current and surface leakage current. In this article, we present the results of a detailed study of the internal electric field and conductivity changes in CdZnTeSe detector for various annealing steps under bias taking into account different polarities during annealing and subsequent characterization. We observed that low-temperature annealing results in an increase in the barrier height at the contacts that, in general, reduces the dark current and decreases the positive space charge present in the sample compared to the pre-annealed condition.

Influence of Powder Milling and Annealing Parameters on the Formation of Cubic Li7La3Zr2O12 Compound

Li-ion batteries are widely used as energy storage devices due to their excellent electrochemical performance. The cubic Li7La3Zr2O12 (c-LLZO) compound is regarded as a promising candidate as a solid-state electrolyte for lithium-ion batteries due to its high bulk Li-ion conductivity, excellent thermal performance, and chemical stability. The standard manufacturing procedure involves the high-temperature and lengthy annealing of powders. However, the formation of the tetragonal modification of LLZO and other undesired side phases results in the deterioration of electrochemical properties. The mechanical milling of precursor powders can enhance the powders’ reactivity and can result in an easier formation of c-LLZO. The aim of this work was to study the influence of selected milling and annealing parameters on c-LLZO compound formation. The starting powders of La(OH)3, Li2CO3, and ZrO2 were subjected to milling in various ball mills, under different milling conditions. The powders were then annealed at various temperatures for different lengths of times. These studies showed that the phase transformation processes of the powders were not very sensitive to the milling parameters. On the other hand, the final phase composition and microstructure strongly depended on heat treatment conditions. Low temperature annealing (750 °C) for 3 h produced 90% of c-LLZO in the powder structure.

Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height

To obtain an ohmic contact with a flat interface using a low-temperature process, we investigated the behavior of Schottky barrier height (SBH) at the Mg/n-type 4H-SiC interface to low-temperature annealing. Our results revealed that annealing at 200 °C reduced SBH; a low SBH of 0.28 eV was obtained on the lightly doped substrate. Atomic force microscopy measurements revealed negligible increase in the surface roughness after Mg deposition and annealing. Using the low-temperature process, a contact resistivity of 6.5 × 10−5 Ω⋅cm2 was obtained on the heavily doped substrate, which is comparable to Ni/4H-SiC subjected to annealing of above 950 °C.

Phase transition in vanadium oxide films formed by multistep deposition

VOx films deposited using the multistep method have been investigated. These films were deposited by repeating the two-stage method of low-temperature deposition – low-temperature annealing. The structure and characteristics of VOx thin films have been studied. Taking into account the obtained results, theoretical modeling of the structure was performed and the parameters of the metal-insulator transition have been calculated.