AbstractThis paper identifies some mechanisms that lead to problems in back Al contact formation. Major issues are related to a basic problem that the Al melt has a large surface tension and tries to ball up during the firing step. Other issues arise from dissolution of the Si-Al interface and entrapment of glass within the Si-Al alloy. Si diffusion into Al can be applied to control the melt, while cooling rate can help improve the structure of various regions of the back contact for a favorable series resistance. We also discuss a modified time-temperature profile that can lead to a deep and uniform back-surface field.
Analysis of contact recombination at rear local back surface field via boron laser doping and screen-printed aluminum metallization on p-type PERC solar cells