Постростовые технологии каскадных фотоэлектрических преобразователей на основе A-=SUP=-3-=/SUP=-B-=SUP=-5-=/SUP=--гетероструктур

Investigation and development of the post-growth technology for fabricating multi-junction photovoltaic converters based on GaInP/GaInAs/Ge heterostructure has been carried out. Antireflection coating, ohmic contacts and mesa-structure forming stages have been reviewed. The technology of n+-GaAs contact layer etching with the help of plasma-chemical, liquid and ion-beam etching has been investigated. Antireflection coefficient of radiation from the heterostructure with TiOx/SiO2 (x close to 2) antireflection coating surface was less then 3% in wavelength range 450-850 nm. The value of contact resistance for n- and p-type conductivity was 3E−5 − 3E−6 ohm · cm2, the decrease of photosensitive region shading degree at increased bus-bar conductivity has been archived. The mesa-structure surface current leakage decreased to the value of E-9 A at voltage less then 1 V.

Optimization of Antireflection Coating Design Using PC1D Simulation for c − Si Solar Cell Application

Minimizing the photon losses by depositing an anti-reflection layer can increase the conversion efficiency of the solar cells. In this paper, the impact of anti-reflection coating (ARC) for enhancing the efficiency of silicon solar cells is presented. Initially, the refractive indices and reflectance of various ARC materials were computed numerically using the OPAL2 calculator. After which, the reflectance of SiO2,TiO2,SiNx with different refractive indices (n) were used for analyzing the performance of a silicon solar cells coated with these materials using PC1D simulator. SiNx and TiO2 as single-layer anti-reflection coating (SLARC) yielded a short circuit current density (Jsc) of 38.4 mA/cm2 and 38.09mA/cm2 respectively. Highest efficiency of 20.7% was obtained for the SiNx ARC layer with n=2.15. With Double-layer anti-reflection coating (DLARC), the Jsc improved by ∼0.5 mA/cm2 for SiO2/SiNx layer and hence the efficiency by 0.3%. Blue loss reduces significantly for the DLARC compared with SLARC and hence increase in Jsc by 1 mA/cm2 is observed. The Jsc values obtained is in good agreement with the reflectance values of the ARC layers. The solar cell with DLARC obtained from the study showed that improved conversion efficiency of 21.1% is obtained. Finally, it is essential to understand that the key parameters identified in this simulation study concerning the DLARC fabrication will make experimental validation faster and cheaper.

Influence of the Characteristics of Multilayer Interference Antireflection Coatings Based on Nb, Si, and Al Oxides on the Laser-Induced Damage Threshold of ZnGeP2 Single Crystal

In this work, the effect of the defect structure and the parameters of antireflection interference coatings based on alternating layers of Nb2O5/Al2O3 and Nb2O5/SiO2 layers on the laser-induced damage threshold of ZGP crystals under the action of Ho:YAG laser radiation at a wavelength of 2.097 μm was determined. Coating deposition was carried out using the ion-beam sputtering method. The laser-induced damage threshold of the sample with a coating based on alternating layers Nb2O5 and SiO2 was W0d = 1.8 J/cm2. The laser-induced damage threshold of the coated sample based on alternating layers of Nb2O5 and Al2O3 was W0d = 2.35 J/cm2. It has been found that the presence of silicon conglomerates in an interference antireflection coating leads to a decrease in the laser-induced damage threshold of a nonlinear crystal due to local mechanical stresses and the scattering of incident laser radiation.

Investigation of Enhanced Ambient Contrast Ratio in Novel Micro/Mini-LED Displays

In recent years, ambient contrast ratio (ACR) has become very critical for advanced outdoor displays, including transparent displays, portable displays, and so on. In this work, the ACR of typical flat panel displays was introduced, while LED-based displays showed distinctive advantages. Micro-LED displays with a different pitch of 10 μm, 15 μm, 30 μm, and 60 μm were fabricated and characterized. Various mini-LED and micro-LED panels were systematically investigated in the aspect of brightness, reflection phenomenon, and ACR to reveal their enormous potential for outdoor applications. Through a series of experiments and comparisons, three methods were proposed to further improve the ACR of LED-based panels, including optical method, antireflection coating, and structure optimization.

Selection of Materials for Double Layer Antireflection Coating of Silicon Solar Cell

In present work an attempt has been made to select material to design double layer antireflection coatings (DLARC) for silicon solar cell, theoretically. In this regard, silicon nitride (Si3N4) is used along with MgF2 and SiO2 to design DLARC to achieve zero reflectance over wide range of spectra. Reflection spectra for DLARC systems of MgF2/Si3N4 and SiO2/Si3N4 have been evaluated numerically using transfer matrix method (TMM). Further, reflectance for MgF2/Si3N4 is investigated at various monitoring wavelengths (o = 550, 600, 650 and 700 nm). Calculated reflectance has been used in PC1D simulator to study the effect of double layer antireflection coating on optical and electrical parameters of silicon solar cell. Simulation results shows, reduction in reflectance form > 30% down to zero in the wavelength range 500 – 700 nm with conversion efficiency 21.33% at 600 nm for MgF2/Si3N4.