A K-Band Power Amplifier with 26-dBm Output Power and 34% PAE with Novel Inductance-based Neutralization in 90-nm CMOS

Author(s):  
Wei-Cheng Huang ◽  
Jung-Lin Lin ◽  
Yu-Hsuan Lin ◽  
Huei Wang
Author(s):  
Clarence Rebello ◽  
Ted Kolasa ◽  
Parag Modi

Abstract During the search for the root cause of a board level failure, all aspects of the product must be revisited and investigated. These aspects encompass design, materials, and workmanship. In this discussion, the failure investigation involved an S-Band Power Amplifier assembly exhibiting abnormally low RF output power where initial troubleshooting did not provide a clear cause of failure. A detailed fault tree drove investigations that narrowed the focus to a few possible root causes. However, as the investigation progressed, multiple contributors were eventually discovered, some that were not initially considered.


Author(s):  
Ahmed S. H. Ahmed ◽  
Utku Soylu ◽  
Munkyo Seo ◽  
Miguel Urteaga ◽  
Mark J. W. Rodwell

Author(s):  
Dirk Schwantuschke ◽  
Peter Bruckner ◽  
Sandrine Wagner ◽  
Michael Dammann ◽  
Michael Mikulla ◽  
...  

Author(s):  
Erdin Ture ◽  
Dirk Schwantuschke ◽  
Axel Tessmann ◽  
Sandrine Wagner ◽  
Peter Bruckner ◽  
...  

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