A compact H-band Power Amplifier with High Output Power

Author(s):  
Ahmed S. H. Ahmed ◽  
Utku Soylu ◽  
Munkyo Seo ◽  
Miguel Urteaga ◽  
Mark J. W. Rodwell
2021 ◽  
Vol 19 ◽  
pp. 28-37
Author(s):  
Muhammad Noaman Zahid ◽  
Jianliang Jiang ◽  
Heng Lu ◽  
Hengli Zhang

In Radio Frequency (RF) communication, a Power Amplifier (PA) is used to amplify the signal at the required power level with less utilization of Direct Current (DC) power. The main characteristic of class-E PA is sturdy nonlinearity due to the switching mode action. In this study, a modified design of class-E PA with balanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and high output power for Electronic Article Surveillance (EAS) Radio Frequency Identification (RFID) application is presented. MOSFETs are adjusted to have high output performance of about 80% for RFID-based EAS system. A matching network is also proposed for accurate matching because there are differences in the behavior between RF waves and low frequency waves. The design of a matching network is a tradeoff among the complexity, adjustability, implementation, and bandwidth for the required output power and frequency. The implemented PA is capable of providing 44.8 dBm output power with Power-Added Efficiency (PAE) of 78.5% at 7.7 MHz to 8.7 MHz.


Power amplifiers are one of the most important functional blocks in the Radio Frequency (RF) frontend for reliable wireless communications. The power amplifiers amplify and boost the input signal to needed output power. The signal is amplified to create it sufficiently high for the transmitter to propagate the needed distance to the receiver. Such as power amplifiers are expected to need low-power communication while producing a relatively high output power with more efficiency. The trans-receiver has various blocks such as filters, Voltage Control Oscillator (VCO), Low Noise Amplifier (LNA) and power amplifier. Among these, the most power hungry device is a power amplifier. The efficiency of the power amplifier can be 100%, but practically it is just 55%. So, the scope of improvement in efficiency in a power amplifier will be an interesting and most challenging task. As well defined architecture, including linear functional block synthesis, which is complex in designing CMOS power amplifier for different applications. This article describes the different state-of-the-art design biasing class and advanced RF CMOS power amplifier for Industrial, Scientific, and Medical (ISM) band applications.


Sensors ◽  
2019 ◽  
Vol 19 (13) ◽  
pp. 2924
Author(s):  
Jinjie Zhou ◽  
Yang Zheng

The linear power amplifier with high-output power in the broadband frequency is the critical component required by exciting the electromagnetic acoustic transducer (EMAT) to generate ultrasonic guided wave (UGW). The methods to realize the output of a high-power signal in the linear amplification mode and to expand the bandwidth at high-output power are seldom reported. To solve these problems, a power amplifier with differential structure is developed by using the parallel amplification architecture and the broadband feedback circuits. The proposed power amplifier uses a differential structure to suppress the even harmonic waves and remove the disruptions. Each branch of the differential structure consists of five linear power amplifier modules with output terminals connected in parallel to increase the output power. Also, the negative voltage feedback is used to extend the bandwidth of the power amplifier. The experimental results show that the −3 dB bandwidth of the amplifier is from 40 kHz to 2.5 MHz, and the transient output power is greater than 1 kW. The power amplifier can drive the EMATs to generate ultrasonic guided waves. Because of the high-output power and good linearity, the proposed power amplifier has excellent potential for EMAT UGW applications.


Author(s):  
P. Huang ◽  
E. Lin ◽  
R. Lai ◽  
M. Biedenbender ◽  
T.W. Huang ◽  
...  

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