High-Gain AlGaN/GaN HEMT Single Chip E-Band Power Amplifier MMIC with 30 dBm Output Power

Author(s):  
Erdin Ture ◽  
Dirk Schwantuschke ◽  
Axel Tessmann ◽  
Sandrine Wagner ◽  
Peter Bruckner ◽  
...  
Author(s):  
Dirk Schwantuschke ◽  
Peter Bruckner ◽  
Sandrine Wagner ◽  
Michael Dammann ◽  
Michael Mikulla ◽  
...  

2019 ◽  
Vol 11 (7) ◽  
pp. 546-553 ◽  
Author(s):  
Marcin Góralczyk ◽  
Wojciech Wojtasiak

AbstractThis paper describes the development of a power amplifier operating over a 2.4–2.5 GHz frequency range with the output power level more than 15 W and 60% PAE. The transistor applied was the 10 W (13 W Psat) power GaN HEMT (CGH40010F from Wolfspeed) recommended up to 6 GHz. A harmonic tuning method was used to achieve even 30% more output power than the CGH40010 transistor was specified to deliver while maintaining high gain and high efficiency. Furthermore, an accuracy analysis of amplifier design was also conducted. It included validation and correction of the available transistor models as well as validation of the models of microstrip circuits implemented in ADS. Finally, it was concluded that both the mentioned sources of errors contributed at a similar level.


Author(s):  
Dirk Schwantuschke ◽  
Birte-Julia Godejohann ◽  
Steffen Breuer ◽  
Peter Bruckner ◽  
Michael Mikulla ◽  
...  

Electronics ◽  
2022 ◽  
Vol 11 (1) ◽  
pp. 144
Author(s):  
Xiaopan Chen ◽  
Yongle Wu ◽  
Weimin Wang

This study presents a dual-band power amplifier (PA) with two output ports using a simplified three-port, frequency-dividing matching network. The dual-band, dual-output PA could amplify a dual-band signal with one transistor, and the diplexer-like output matching network (OMN) divided the two bands into different output ports. A structure consisting of a λ/4 open stub and a λ/4 transmission line was applied to restrain undesired signals, which made each branch equivalent to an open circuit at another frequency. A three-stub design reduced the complexity of the OMN. Second-order harmonic impedances were tuned for better efficiency. The PA was designed with a 10-W gallium nitride high electron mobility transistor (GaN HEMT). It achieved a drain efficiency (DE) of 55.84% and 53.77%, with the corresponding output power of 40.22 and 40.77 dBm at 3.5 and 5.0 GHz, respectively. The 40%-DE bandwidths were over 200 MHz in the two bands.


Author(s):  
Clarence Rebello ◽  
Ted Kolasa ◽  
Parag Modi

Abstract During the search for the root cause of a board level failure, all aspects of the product must be revisited and investigated. These aspects encompass design, materials, and workmanship. In this discussion, the failure investigation involved an S-Band Power Amplifier assembly exhibiting abnormally low RF output power where initial troubleshooting did not provide a clear cause of failure. A detailed fault tree drove investigations that narrowed the focus to a few possible root causes. However, as the investigation progressed, multiple contributors were eventually discovered, some that were not initially considered.


Author(s):  
Ahmed S. H. Ahmed ◽  
Utku Soylu ◽  
Munkyo Seo ◽  
Miguel Urteaga ◽  
Mark J. W. Rodwell

2009 ◽  
Vol 44 (10) ◽  
pp. 2648-2654 ◽  
Author(s):  
Kevin W. Kobayashi ◽  
YaoChung Chen ◽  
Ioulia Smorchkova ◽  
Benjamin Heying ◽  
Wen-Ben Luo ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document