A 28/39 GHz Dual-Band Power Amplifier Using Optimal Matching Contour in GaAs pHEMT

Author(s):  
Bo-Wei Huang ◽  
Zi-Hao Fu ◽  
Kun-You Lin
Author(s):  
Heng Xie ◽  
Yu Jian Cheng ◽  
Yan Ran Ding ◽  
Lei Wang ◽  
Yong Fan

2020 ◽  
Vol 17 (11) ◽  
pp. 20200171-20200171
Author(s):  
Zhiwei Zhang ◽  
Zhiqun Cheng ◽  
Huajie Ke ◽  
Guohua Liu
Keyword(s):  

Author(s):  
R. Liu ◽  
D. Schreurs ◽  
W. D. Raedt ◽  
F. Vanaverbeke ◽  
R. Mertens

2013 ◽  
Vol 6 (2) ◽  
pp. 115-128 ◽  
Author(s):  
Vincenzo Carrubba ◽  
Stephan Maroldt ◽  
Markus Mußer ◽  
Herbert Walcher ◽  
Friedbert Van Raay ◽  
...  

This paper presents the design methodology and the realization of a highly linear and power-efficient reconfigurable dual-band amplifier based on the continuous/Class-ABJ approach. The Class-ABJ theory allows presenting different reactive solutions on both fundamental and second harmonic terminations compared with the standard Class-AB mode. Despite the various terminations, a constant optimum output performance in terms of power, gain, and efficiency can still be achieved. The output impedances are then translated into frequency thus allowing the realization of broadbandpower amplifiers(PAs) at high-power level of 30 W. In this work, the Class-ABJ broadband approach will be used for the realization of a reconfigurable dual-band power amplifier operating in the two frequency bands 2.1–2.2 and 2.5–2.6 GHz. Continuous wave (CW) measurements on the realized PA show power and efficiency greater than 17 W and 55% in the two frequency bands with peak values up to 30 W and 63.7%. Indeed, it is shown that such novel modes can be predistorted and therefore the linearity requirement can also be met.


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