Nonuniform Layer Model of a Millimeter-Wave Phase Shifter (Comments)

1986 ◽  
Vol 34 (11) ◽  
pp. 1226-1227
Author(s):  
K. Ogusu ◽  
I. Tanaka
2013 ◽  
Vol 55 (3) ◽  
pp. 465-468 ◽  
Author(s):  
Dimitra Psychogiou ◽  
Yunjia Li ◽  
Jan Hesselbarth ◽  
Stephane Kühne ◽  
Dimitrios Peroulis ◽  
...  

2014 ◽  
Vol 104 (2) ◽  
pp. 024104 ◽  
Author(s):  
P. Romano ◽  
O. Araromi ◽  
S. Rosset ◽  
H. Shea ◽  
J. Perruisseau-Carrier

Author(s):  
Mohammad Soltani ◽  
Shaghayegh Yaraghi ◽  
Karim Mohammadpour-Aghdam ◽  
Mahmoud Shahabadi

2011 ◽  
Vol 3 (5) ◽  
pp. 533-538 ◽  
Author(s):  
Dmitry Chicherin ◽  
Mikael Sterner ◽  
Dmitri Lioubtchenko ◽  
Joachim Oberhammer ◽  
Antti V. Räisänen

Millimeter-wave phase shifters are important components for a wide scope of applications. An analog-type phase shifter for W-band has been designed, analyzed, fabricated, and measured. The phase shifter consists of a reconfigurable high-impedance surface (HIS) controlled by micro-electromechanical system (MEMS) varactors and placed adjacent to a silicon dielectric rod waveguide. The analog-type phase shift in the range of 0–32° is observed at 75 GHz whereas applying bias voltage from 0 to 40 V to the MEMS varactors. The insertion loss of the MEMS tunable HIS is between 1.7 and 5 dB, depending on the frequency.


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