Design of polarization switch in a single micro-ring resonator and its application to design all-optical logic OR/NOR gates using FDTD

Author(s):  
Madan Pal Singh ◽  
Gaurav Kumar Bharti ◽  
Jayanta Kumar Rakshit ◽  
Uttara Biswas
Author(s):  
Jayanta Kumar Rakshit ◽  
Gaurav Kumar Bharti

The realization of all-optical polarization switch and all-optical logic gates based on polarization-conversion on single silicon micro-ring resonator (MRR) is demonstrated. By adjusting the mode state of the input source as well as the pump light, the all-optical polarization switch, and hence, all-optical NOT, OR/NOR. AND-NAND logic gates are realized. The design is ultra-compact, ultrafast, and less optical power is required for all-optical polarization-conversion-based switch and logic gates, respectively. The MRR also shows outstanding performance as its Q (quality) factor is very high. The design is robust, simple, stable, easy-to-fabricate, and silicon-on-insulator (SOI) compatible. The structure is compatible for interconnects and capable for integrating in electronics as well as in plasmonics circuits.


2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Hassan Mamnoon-Sofiani ◽  
Sahel Javahernia

Abstract All optical logic gates are building blocks for all optical data processors. One way of designing optical logic gates is using threshold switching which can be realized by combining an optical resonator with nonlinear Kerr effect. In this paper we showed that a novel structure consisting of nonlinear photonic crystal ring resonator which can be used for realizing optical NAND/NOR and majority gates. The delay time of the proposed NAND/NOR and majority gates are 2.5 ps and 1.5 ps respectively. Finite difference time domain and plane wave expansion methods were used for simulating the proposed optical logic gates. The total footprint of the proposed structure is about 988 μm2.


2014 ◽  
Vol 312 ◽  
pp. 73-79 ◽  
Author(s):  
Jitendra Nath Roy ◽  
Jayanta Kumar Rakshit

Plasmonics ◽  
2022 ◽  
Author(s):  
Rida El Haffar ◽  
Oussama Mahboub ◽  
Abdelkrim Farkhsi ◽  
Mustapha Figuigue

2021 ◽  
Author(s):  
Rida El Haffar ◽  
oussama mahboub ◽  
Abdelkrim Farkhsi ◽  
Mustapha Figuigue

Abstract All - optical logic gates OR, XOR, AND and NOT based on two - dimensional ( 2D ) plasmonic metal - insulator - metal ( MIM ) coupled with Elliptical Ring Resonator ( ERR ) are presented , simulated and investigated by using the numerical method of the FEM (finite elements method ). The results are compared and validated with the finite difference time domain ( FDTD ) method . The proposed logic gates are achieved with the same structure using the constructive and destructive optical interferences between a control signal and input signal(s). Their characterization was mainly done for two spectral regions , visible and near - infrared . A high intensity contrast ratios (CR) between the logic states ( “1” and “0” ) can be achieved (28 dB ) at these spectral regions . We introduce a new parameter , "gap- threshold ratio ( GTR )", to characterize the gap between the maximum and minimum of the transmitted signal intensity for all logic gates. The suggested value of transmission threshold between logic 0 and logic 1 states is T th =0.2 . A comparison of the two parameters , (CR) and ( GTR ), with previous works shows that the proposed structure gives very good results for all logic gates configurations. The proposed all- optical logic gates configuration can be a key components in optical processing and telecommunication devices .


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