LoGHeD: An effective approach for negative differential resistance effect suppression in negative capacitance transistors

A negative capacitance transistor (NCFET) with fully depleted silicon-on-insulator (FDSOI) technology (NC-FDSOI) is one of the promising candidates for next-generation low-power devices. However, it suffers from the inherent negative differential resistance (NDR) effect, which is very detrimental to device and circuit designs. Aiming at overcoming this shortcoming, this paper proposes for the first time to use local Gaussian heavy doping technology (LoGHeD) in the channel near the drain side to suppress the NDR effect in the NC-FDSOI. The technical computer-aided design (TCAD) simulation results have validated that the output conductance (GDS) with LoGHeD, which is used to measure the NDR effect, increases compared to the conventional NC-FDSOI counterpart and approaches zero. With the increase in doping concentration, the inhibitory capability of the NDR effect shows a monotonously increasing trend. In addition, the proposed approach maintains and even enhances performances of the NC-FDSOI transistor regarding the electrical parameters, such as threshold voltage (VTH), sub-threshold swing (SS), switching current ratio (ION/IOFF), and drain-induced barrier lowering (DIBL).

Adaptive opto-electromechanical silicon-on-insulator increased bandwidth accelerometer

This paper studies the construction of a compact one-dimension-sensing iscreased bandwidth photonic accelerometer using cascaded groups of continued sections of a 50 ng seismic mass each attached to the silicon beams of two under etched slot waveguide electrostatic phase shift elements acting as voltage-controlled adaptive-precision springs. The accelerometer sensitivity is shown to be significantly increased by applying equal electrode voltages. Simulation results indicate that the sensitivity dynamic range is about 76 dB combining both open-loop and closed-loop voltage control of the sensor. The operation bandwidth of the accelerometer may be increased up to 250 kHz due to the cascaded multi-section architecture of the sensor. This advantage gives significant relief to the limitation in bandwidth response of single section counterparts. The sensor may be designed to detect impact accelerations up to 104 ms−2 and yet can still be electrostatically driven to detect sub-gravitational accelerations. The application of negative feedback voltage control to hold the seismic mass at close distances from a standstill is shown to significantly increase the acceleration detection range. The construction uses all in-plane components based on a silicon-on-insulator template with 300 nm of silicon core thickness. The proposed electromechanical suspension system and the electric feeding arrangements are the most simple. The accelerometer performance is theoretically deterministic. The study is based on performing numerical analysis for the electromechanical suspension system. The waveguides are simulated utilizing the VPIphotonics industry standard. Applications may include the automobile and aerospace industries, underwater sonar, industrial ultrasonic detection, seismology predictions, and medical ultrasonography. Article Highlights The cascading of compact high-speed accelerometer sections allows increasing the bandwidth response of the proposed sensor by many folds compared to its single-mass single-section counterparts. The suspension structure is electrostatically controlled by two voltages enabling widely controlling the sensitivity and detection range of the accelerometer. The proposed accelerometer may fit wide applications achieving high detection speeds and super sensitivities utilizing a small footprint and power-efficient structure.

PR_26 Coupled Microring Resonators: Towards Overcoming Disorder Effects

Extended abstract of an invited presentation at the CMOS Emerging Technologies Conference. Long CROWs are experimentally realized which consist of hundreds of coupled silicon microring racetrack resonators fabricated using CMOS-compatible fabrication on silicon-on-insulator (SOI) wafers.

Silicon 3D Microdosimeters for Advanced Quality Assurance in Particle Therapy

The Centre for Medical Radiation Physics introduced the concept of Silicon On Insulator (SOI) microdosimeters with 3-Dimensional (3D) cylindrical sensitive volumes (SVs) mimicking the dimensions of cells in an array. Several designs of high-definition 3D SVs fabricated using 3D MEMS technology were implemented. 3D SVs were fabricated in different sizes and configurations with diameters between 18 and 30 µm, thicknesses of 2–50 µm and at a pitch of 50 µm in matrices with volumes of 20 × 20 and 50 × 50. SVs were segmented into sub-arrays to reduce capacitance and avoid pile up in high-dose rate pencil beam scanning applications. Detailed TCAD simulations and charge collection studies in individual SVs have been performed. The microdosimetry probe (MicroPlus) is composed of the silicon microdosimeter and low-noise front–end readout electronics housed in a PMMA waterproof sheath that allows measurements of lineal energies as low as 0.4 keV/µm in water or PMMA. Microdosimetric quantities measured with SOI microdosimeters and the MicroPlus probe were used to evaluate the relative biological effectiveness (RBE) of heavy ions and protons delivered by pencil-beam scanning and passive scattering systems in different particle therapy centres. The 3D detectors and MicroPlus probe developed for microdosimetry have the potential to provide confidence in the delivery of RBE optimized particle therapy when introduced into routine clinical practice.

Compact Gas Sensor Using Silicon-on-Insulator Loop-Terminated Mach–Zehnder Interferometer

In this paper, we propose a compact optical gas sensor based on the widespread silicon-on-insulator (SOI) technology, operating in the near-infrared (NIR) region around the 1.55 µm wavelength. The sensor employs a loop-terminated Mach–Zehnder interferometer (LT-MZI) with a slot waveguide and a strip waveguide for the sensing arm and the reference arm, respectively. For the same arm length, the LT-MZI can achieve a detection limit two times lower than that of the conventional MZI. Different sensor components were designed, and the optimum dimensions were obtained using finite-difference eigenmode (FDE) and finite-difference time-domain (FDTD) solvers. With a sensing arm length of only 150 μm, our sensor achieves a device sensitivity of 1070 nm/RIU and a figure-of-merit (FOM) as high as 280.8 RIU−1 at the 1.55 μm wavelength. Higher values of FOM can be attained by employing a longer sensing arm. The whole sensor is subjected to air cladding; thus, there is no need for oxide deposition and a further lithography step for sensing-area patterning. The sensor is well suited for low-cost fabrication and large-scale production. Finally, the same LT-MZI device with strip and slot arms but with oxide cladding was fabricated and characterized. The measurements were in good agreement with the electromagnetic (EM) simulation results, ensuring the reliability of our proposed design.

Design and characteristics of reflectivity tunable mirror with MZI and loop waveguide on SOI

To achieve a reconfigurable photonic integrated circuit with active elements, we proposed a reflectivity tunable mirror constructed using a Mach–Zehnder interferometer (MZI) with a micro heater and loop waveguide on a silicon photonics platform. In this paper, the principle of the operation, design, fabrication, and measurement results of the mirror are presented. In theory, the phase shift dependence of the mirror relies on the coupling coefficient of the directional couplers of the MZI. When the coupling coefficient κ2 was 0.5 and 0.15, the reflection could be turned on and off with a phase shift of π/2 and π, respectively. The reflection power of the fabricated mirror on the silicon on insulator (SOI) substrate was changed by more than 20 dB by a phase shift. In addition, it was demonstrated that the phase shift dependence of the mirror changes with the coupling coefficient of the fabricated devices.

SOI Waveguide Bragg Grating Photonic Sensor for Human Body Temperature Measurement Based on Photonic Integrated Interrogator

A waveguide Bragg grating (WBG) provides a flexible way for measurement, and it could even be used to measure body temperature like e-skin. We designed and compared three structures of WBG with the grating period, etching depth, and duty cycle. The two-sided WBG was fabricated. An experimental platform based on photonic integrated interrogator was set up and the experiment on the two-sided WBG was performed. Results show that the two-sided WBG can be used to measure temperature changes over the range of 35–42 °C, with a temperature measurement error of 0.1 °C. This approach has the potential to facilitate application of such a silicon-on-insulator (SOI) WBG photonic sensor to wearable technology and realize the measurement of human temperature.