A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application
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2008 ◽
Vol 155
(5)
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pp. A374
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1994 ◽
Vol 4
(2)
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pp. 169-182
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2014 ◽
Vol 50
(6)
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pp. 3931-3942
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1988 ◽
Vol 24
(3)
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pp. 387-394
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