2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)
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132

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10

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Published By IEEE

9784886860941, 9784886860965

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

A novel hybrid power module with dual side-gate HiGT and SiC-SBD

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) ◽

10.23919/ispsd.2017.7988892 ◽

2017 ◽

Author(s):

Y. Takeuchi ◽

T. Miyoshi ◽

T. Furukawa ◽

M. Shiraishi ◽

M. Mori

Keyword(s):

Power Module ◽

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A new characterization technique for extracting parasitic inductances of fast switching power MOSFETs using two-port vector network analyzer

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) ◽

10.23919/ispsd.2017.7988967 ◽

2017 ◽

Author(s):

Tianjiao Liu ◽

Runtao Ning ◽

Thomas T. Y. Wong ◽

Z. John Shen

Keyword(s):

Vector Network Analyzer ◽

Network Analyzer ◽

Power Mosfets ◽

Switching Power ◽

Fast Switching ◽

Characterization Technique

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A snapback-free RC-IGBT with Alternating N/P buffers

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) ◽

10.23919/ispsd.2017.7988943 ◽

2017 ◽

Author(s):

Gaoqiang Deng ◽

Xiaorong Luo ◽

Kun Zhou ◽

Qingyuan He ◽

Xinliang Ruan ◽

...

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Process design of superjunction MOSFETs for high drain current capability and low on-resistance

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) ◽

10.23919/ispsd.2017.7988882 ◽

2017 ◽

Author(s):

Wataru Saito

Keyword(s):

Process Design ◽

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An advanced bimode insulated gate transistor BIGT with low diode conduction losses under a positive gate bias

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) ◽

10.23919/ispsd.2017.7988884 ◽

2017 ◽

Author(s):

Munaf Rahimo ◽

Charalampos Papadopoulos ◽

Chiara Corvasce ◽

Amost Kopta

Keyword(s):

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High aspect ratio deep trench termination (HARDT2) technique surrounding die edge as dielectric wall to improve high voltage device area efficiency

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) ◽

10.23919/ispsd.2017.7988883 ◽

2017 ◽

Author(s):

Takuya Yamaguchi ◽

Hideki Okumura ◽

Tatsuya Shiraishi ◽

Tsuyoshi Fujita ◽

Yoshifumi Ata ◽

...

Keyword(s):

Aspect Ratio ◽

High Voltage ◽

High Aspect Ratio ◽

Deep Trench ◽

Dielectric Wall ◽

Area Efficiency

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Call for papers

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) ◽

10.23919/ispsd.2017.7988871 ◽

2017 ◽

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Relation between UIS withstanding capability and gate leakage currents for high voltage GaN-HEMTs

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) ◽

10.23919/ispsd.2017.7988922 ◽

2017 ◽

Author(s):

Toshiyuki Naka ◽

Wataru Saito

Keyword(s):

High Voltage ◽

Gate Leakage ◽

Leakage Currents ◽

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High/low-side hybrid output transistor with high thermal-SOA

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) ◽

10.23919/ispsd.2017.7988897 ◽

2017 ◽

Author(s):

Shinichiro Wada ◽

Katsumi Ikegaya ◽

Takayuki Oshima ◽

Yoichiro Kobayashi

Keyword(s):

Output Transistor

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ISPSD2017 Contributory Award [and two other awards]

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) ◽

10.23919/ispsd.2017.7988868 ◽

2017 ◽

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