Low-coherence interferometric fiber multiplexed sensor systems using an integrated optical configuration

1995 ◽  
Author(s):  
Alan J. Rogers ◽  
M. J. Plissi
Keyword(s):  
Sensor Systems ◽  
Low Coherence ◽  
Integrated Optical ◽  
Optical Configuration

Heterodyne processing scheme for low coherence interferometric sensor systems

1991 ◽  
Vol 138 (6) ◽  
pp. 393
Author(s):  
B.T. Meggitt ◽  
W.J.O. Boyle ◽  
K.T.V. Grattan ◽  
A.E. Baruch ◽  
A.W. Palmer
Keyword(s):  
Sensor Systems ◽  
Processing Scheme ◽  
Low Coherence ◽  
Interferometric Sensor

Plasma Impulse CVD Deposited TiO2 Waveguiding Films: Properties and Potential Applications in Integrated Optical Sensor Systems

1992 ◽  
Vol 276 ◽  
Author(s):  
M. Heming ◽  
B. Danielzik ◽  
J. Otto ◽  
V. Paquet ◽  
Ch. Fattinger
Keyword(s):  
Thin Films ◽  
Optical Sensor ◽  
Environmental Stability ◽  
Sensor Systems ◽  
Integrated Optical ◽  
Potential Applications ◽  
Low Volume ◽  
Substrate Temperatures ◽  
Integrated Optical Sensor

ABSTRACTPlasma impulse CVD deposited titania thin films, deposited at low substrate temperatures, exhibit low volume losses of < 0.2 dB/cm and high environmental stability. Their use in novel concepts for integrated optical immunosensors is discussed.

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

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