Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

Electrical and Optical Properties of Sol-Gel Processed Pb(Zr,Ti)o3 Films

1992 ◽  
Vol 271 ◽  
Author(s):  
S. D. Ramamurthi ◽  
S. L. Swartz ◽  
K. R. Marken ◽  
J. R. Busch ◽  
V. E. Wood Battelle
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Optical Characterization ◽  
Solvent System ◽  
Processing Parameters ◽  
Lead Zirconate ◽  
Electrical And Optical Properties ◽  
Annealing Conditions ◽  
Electro Optic ◽  
Pzt Films

ABSTRACTLead-zirconate-titanate, Pb(Zr0.53Ti0.47)O3, films were produced by the sol-gel method from alkoxide and acetate precursors in a 2-methoxyethanol solvent system. The PZT films were deposited on platinized silicon and single-crystal SrTiO3 substrates for electrical and optical characterization, respectively. The processing parameters, especially excess PbO content and annealing conditions, were shown to have a significant effects on the properties of PZT films. Epitaxial PZT films deposited on SrTiO3 waveguided over 10 mm distances with propagation losses as low as 5.9 dB/cm at 783 nm and a linear electro-optic effect was also demonstrated.

Rapid Thermal Processing of Ferroelectric Thin Films

1991 ◽  
Vol 224 ◽  
Author(s):  
Zheng Wu ◽  
Roberto Pascual ◽  
C.V.R. Vasant Kumar ◽  
David Amd ◽  
Michael Sayer
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Crystallization Behavior ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Lead Zirconate ◽  
Dielectric Constants ◽  
Heating Rates ◽  
Pzt Films

AbstractThe preparation of ferroelectric lead zirconate titanate (PZT) thin films by rapid thermal processing (RTP) is reported. The films were deposited by chemical sol gel and physical sputter techniques. The heating rate of RTP was found to have significant influence on the crystallization behavior. Faster heating rates lead to lowering of the crystallization temperature and reduction of grain size. PZT films were obtained with dielectric constants ~ 1000, remanent polarizations between 20 and 30μC/cm2, coercive fields 20 to 60kV/cm, and no significant fatigue for 109 to 1010 stressing cycles.

EFFECT OF PRE-HEATING TEMPERATURE ON THE CHARACTERISTICS OF PZT THIN FILMS GROWN BY USING A TRIOL SOL–GEL ROUTE

2007 ◽  
Vol 14 (02) ◽  
pp. 229-234
Author(s):  
SARAWUT THOUNTOM ◽  
MANOCH NAKSATA ◽  
KENNETH MACKENZIE ◽  
TAWEE TUNKASIRI
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Heating Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Ferroelectric Hysteresis

Lead zirconate titanate (PZT) films with compositions near the morphotropic phase boundary were fabricated on Pt (111)/ Ti / SiO 2/ Si (100) using the triol sol–gel method. The effect of the pre-heating temperature on the phase transformations, microstructures, electrical properties, and ferroelectric properties of the PZT thin films was investigated. Randomly oriented PZT thin films pre-heated at 400°C for 10 min and annealed at 600°C for 30 min showed well-defined ferroelectric hysteresis loops with a remnant polarization of 26.57 μC/cm2 and a coercive field of 115.42 kV/cm. The dielectric constant and dielectric loss of the PZT films were 621 and 0.0395, respectively. The microstructures of the thin films are dense, crack-free, and homogeneous with fine grains about 15–20 nm in size.

Effect of oxygen partial pressure on texture development in lead zirconate titanate thin films processed from metalorganic precursors

1999 ◽  
Vol 14 (12) ◽  
pp. 4615-4620
Author(s):  
Jarrod L. Norton ◽  
Gerald L. Liedl ◽  
Elliott B. Slamovich
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Texture Development ◽  
Pure Oxygen ◽  
Maximum Temperature ◽  
Zirconate Titanate ◽  
Liquid Precursors ◽  
Pzt Films ◽  
Switching Temperature

Metalorganic liquid precursors were used to examine the effects of processing atmosphere on texture development in oriented Pb(Zr0.60Ti0.40)O3 thin films. After removal of organic ligands via pyrolysis, the films were heated at 25 °C/min in a 5% H2/Ar atmosphere until a switching temperature, after which the atmosphere was switched to pure oxygen. The films were heated to a maximum temperature of 650 °C with switching temperatures ranging from 450 to 600 °C. The degree of (111) orientation in the lead zirconate titanate (PZT) films increased with increasing switching temperature, resulting in highly textured (111) PZT films. These results suggest that atmosphere control plays a significant role in texture development during rapid thermal processing.

Effect of Microwave Irradiation on Rapid Crystallization of Ferroelectric Lead Zirconate Titanate Thin Films

2013 ◽  
Vol 750 ◽  
pp. 220-223
Author(s):  
Xian Wei Wang ◽  
Zhan Jie Wang ◽  
Yan Na Chen ◽  
Yu Qing Zhang ◽  
Zhi Dong Zhang
Keyword(s):  
Thin Films ◽  
Microwave Irradiation ◽  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Lead Zirconate ◽  
Process Time ◽  
Rapid Crystallization ◽  
Furnace Process ◽  
Conventional Furnace ◽  
Pzt Films

Ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films rapidly crystallized by microwave irradiation were compared with those obtained by conventional furnace process. The PZT films under microwave irradiation at 650 °C for 60 s were crystallized well in to the perovskite phase, and showed butter electrical properties than those crystallized by conventional furnace annealing at 650 °C for 30 min. It is clear that microwave irradiation is effective for obtaining well-crystallized PZT films with good properties in a short process time.

(001)-Oriented LaNiO3 Bottom Electrodes and (001)-Textured Ferroelectric Thin Films on LaNiO3

1999 ◽  
Vol 596 ◽  
Author(s):  
Zhenshan Zhang ◽  
Jeong Hwan Park ◽  
Susan Trolier-McKinstry
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Metallic Oxide ◽  
Working Pressure ◽  
Si Substrates ◽  
Oxide Electrodes ◽  
Pzt Films ◽  
Deposited Films

AbstractIn this work, highly (001)pc-oriented thin films of LaNiO3 (LNO) were deposited by DC magnetron sputtering onto Si substrates (pc = pseudocubic indices). The target powder was prepared using a molten salt technique with Na2CO3 as a flux. The final target density was greater than 85% of theoretical density. The best results were obtained when sputtering was carried out at a power of 186 W and a working pressure of 45 mtorr with a gas composition of 50% O2 + 50% Ar. The thickness of the deposited films was proportional to the sputtering time, and the growth rate was 300Å/hour. Highly (001)-oriented thin films of lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) and Pb[(Mg1/3Nb2/3)0.7Ti0.3]O3 (PMN-PT) were fabricated by a sol-gel method on (001)-textured LNO metallic oxide electrodes. A remanent polarization of 12 μC/cm2 and d31 of -125 pC/N (assuming a Young's modulus of 35 GPa) were measured on the PMN-PT thin films with a thickness of 0.9 μm. This piezoelectric coefficient considerably exceeds that available from PZT films, and depends critically on the film orientation. Changes in the hysteresis loop due to externally applied stress will also be described.

Crystal Phase and Orientation Dependence of Electro-Optic Effect in Epitaxial PLZT an PZT Films

2007 ◽  
Vol 350 ◽  
pp. 99-102
Author(s):  
Keisuke Satoh ◽  
Akio Sugama ◽  
Masatoshi Ishii ◽  
Masao Kondo ◽  
Kazuaki Kurihara
Keyword(s):  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Epitaxial Films ◽  
Orientation Dependence ◽  
Pockels Effect ◽  
Solution Deposition ◽  
Zirconate Titanate ◽  
Electro Optic ◽  
Pzt Films ◽  
Extraordinary Refractive Index

Lanthanum-modified lead zirconate titanate and lead zirconate titanate epitaxial films with (100) and (111) orientations were grown respectively on (100) and (111) niobium, lending conductivity to strontium titanate through chemical solution deposition. This study investigated changes in the ordinary and extraordinary refractive index no and ne induced in these films by an electric field using the prism-coupling method. In the (100) epitaxial PZT 30/70 film, anisotropic electro-optic effects arise from the Pockels effect. The isotropic electro-optic effect, which is no = ne , was achieved on (100) epitaxial PLZT 8/65/35 and PZT 70/30 films.

Pulsed excimer laser deposition and characterization of ferroelectric Pb(Zr0.52Ti0.48)O3 thin films

1992 ◽  
Vol 7 (9) ◽  
pp. 2521-2529 ◽  
Author(s):  
D. Roy ◽  
S.B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Lead Zirconate Titanate ◽  
Fatigue Behavior ◽  
Lead Zirconate ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Excimer Laser Ablation ◽  
Pzt Films

Lead zirconate titanate (PZT) thin films were prepared by excimer laser ablation on platinum coated silicon substrates. The composition of the films showed dependence on the fluence at low energy densities (<2 J/cm2), and less dependence on the ablation fluence was observed beyond a fluence of 2 J/cm2. A correlation among the fluence, ablation pressure, and substrate temperature has been established. Crystalline perovskite PZT films showed a dielectric constant of 800–1000, a remnant polarization of 32 μC/cm2, and a coercive field of 130 kV/cm. Films showed fatigue behavior that may be used in a device, and a close comparison of fatigue behavior between the films deposited at different energy densities indicated a better fatigue behavior for a fluence of 4 J/cm2.

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