THE EFFECT OF RESONANCE SCATTERING ON THE CRITICAL TEMPERATURE OF ANISOTROPIC SUPERCONDUCTORS

1967 ◽  
Vol 45 (1) ◽  
pp. 37-45 ◽  
Author(s):  
M. J. Zuckermann ◽  
A. D. Singh

In a previous paper, the effect of a nonmagnetic resonant d orbital (bound to a transition-metal impurity) on a simple isotropic superconductor was discussed. It was shown that the critical temperature Te of such an alloy suffered an initial linear decrease proportional to the impurity concentration NI. The resulting curve of Te versus NI remains linear for experimentally realizable values of the impurity concentration. However, this is not borne out experimentally and one reason for the discrepancy is that the anisotropy of the superconductor was not taken into account theoretically. In this paper, it is shown that the change in Te due to the presence of nonmagnetic transition-metal impurities is given by the sum of three terms, as follows: (a) the isotropic term due to the interaction of the d orbital with the conduction electrons found in the previous paper, (b) the usual term due to the "anisotropic effect" of Markowitz and Kadanoff (1963), and (c) a cross term between the resonance scattering and the anisotropic scattering. The term (c) is shown to be very small compared with (a) and (b) and hence the procedure for comparison with experiment used by Boato et al. (1966) is justified in our approximation.

1995 ◽  
Vol 378 ◽  
Author(s):  
T. Nishino

AbstractA number of sharp characteristic luminescence lines has been observed for GaAs doped with 3d transition-metal impurities in the near-infrared region, the origin being attributed to the zero-phonon intracenter transitions between the energy levels of the metal ions split by the crystal field of the GaAs lattice. It is also known that these luminescence lines are very sensitive to the surrounding field of the transition-metal impurities. The luminescence of Cr-doped GaAs has been most extensively studied, the spectrum revealing a very sharp luminescence line at 0.839 eV. In this paper we review the results on the successful applications of this Cr-related luminescence line to characterization of in-depth profiles of arsenic vacancy in thermally annealed GaAs, local strain field in In-doped GaAs and interface stress at heterostructures grown on Cr-doped GaAs substrate.


2005 ◽  
Vol 2 (7) ◽  
pp. 2520-2524 ◽  
Author(s):  
A.Y. Polyakov ◽  
N.B. Smirnov ◽  
A.V. Govorkov ◽  
Rohit Khanna ◽  
S.J. Pearton

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