Photo-modulated optical and electrical properties of graphene

Photo-modulation is a promising strategy for contactless and ultrafast control of optical and electrical properties of photoactive materials. Graphene is an attractive candidate material for photo-modulation due to its extraordinary physical properties and its relevance to a wide range of devices, from photodetectors to energy converters. In this review, we survey different strategies for photo-modulation of electrical and optical properties of graphene, including photogating, generation of hot carriers, and thermo-optical effects. We briefly discuss the role of nanophotonic strategies to maximize these effects and highlight promising fields for application of these techniques.

Towards high performance near-infrared photo detectors based on SnS nanowires

Compared with bulk structures, semiconductor nanowires exhibit a higher surface-to-volume ratio, as well as unique electrical and optical properties. Due to its narrow band gap, tin (ii) sulfide (SnS) nano wire is a promising candidate for constructing near-infrared (NIR) photodetectors. Uniformly distributed and well aligned SnS nanowires were grown on mica substrate by chemical vapor deposition, and NIR photodetectors with Au (Au-device) and Al (Al-device) as the electrode were fabricated and characterized. Compared to Au-device, Al-device achieved higher photodetectivity due to reduced dark current. More importantly by incorporating photosensitive lead phthalocyanine (PbPc) film into Al-device, both responsivity and detectivity could be apparently improved, especially at weak light intensities. Under a weak light intensity of 0.79 mW/cm2 the photoresponsivity and specific detectivity were improved from ~0.56 A/W and 5.1×1010 Jones to 0.96 A/W and 8.4×1010 Jones, respectively.

The Interplay of Interstitial and Substitutional Copper in Zinc Oxide

Cu impurities are reported to have significant effects on the electrical and optical properties of bulk ZnO. In this work, we study the defect properties of Cu in ZnO using hybrid quantum mechanical/molecular mechanical (QM/MM)–embedded cluster calculations based on a multi-region approach that allows us to model defects at the true dilute limit, with polarization effects described in an accurate and consistent manner. We compute the electronic structure, energetics, and geometries of Cu impurities, including substitutional and interstitial configurations, and analyze their effects on the electronic structure. Under ambient conditions, CuZn is the dominant defect in the d9 state and remains electronically passive. We find that, however, as we approach typical vacuum conditions, the interstitial Cu defect becomes significant and can act as an electron trap.

Characterization of Silver Nanowire Layers in the Terahertz Frequency Range

Thin layers of silver nanowires are commonly studied for transparent electronics. However, reports of their terahertz (THz) properties are scarce. Here, we present the electrical and optical properties of thin silver nanowire layers with increasing densities at THz frequencies. We demonstrate that the absorbance, transmittance and reflectance of the metal nanowire layers in the frequency range of 0.2 THz to 1.3 THz is non-monotonic and depends on the nanowire dimensions and filling factor. We also present and validate a theoretical approach describing well the experimental results and allowing the fitting of the THz response of the nanowire layers by a Drude–Smith model of conductivity. Our results pave the way toward the application of silver nanowires as a prospective material for transparent and conductive coatings, and printable antennas operating in the terahertz range—significant for future wireless communication devices.