Влияние дополнительной имплантации ионов кислорода на дислокационную люминесценцию кремния, содержащего кислородные преципитаты

Dislocation-related photoluminescence is studied in unimplanted and implanted with oxygen ions silicon wafers after multistage heat treatment, used for the formation of internal getter in microelectronics, and final annealing at 1000°С in a chlorine-containing atmosphere. In unimplanted sample, the dislocation-related luminescence line D1 dominates and its intensity is more than one order of magnitude in comparison with another dislocation-related luminescence line D2. With increasing temperature, an intensity of the D1 line increases and then decreases. In implanted sample, the intensities of the D1 and D2 lines increase. For both the lines, temperature quenching of their intensities is observed only. The energies of quenching and increase of the intensities of dislocation-related photoluminescence lines are determined. Possible reasons of observed effects are discussed.

A luminescence line-narrowing spectroscopic study of the uranium(vi) interaction with cementitious materials and titanium dioxide

Luminescence line-narrowing spectroscopy has been applied to identify the mechanisms controlling the uranium retention by titanium dioxide and cement minerals.

The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC

The photoluminescence (PL) of the UD-4 defect is observed in semi-insulating bulk 4H, 6H and 15R SiC. In 4H and 6H SiC the UD-4 defect consists of two families of no-phonon (NP) lines, Ua and Ub, and in 15R SiC it consists of three families, Ua, Ub and U15R. The Ua family in 4H, 6H and 15R all show similar temperature behavior with higher energy NP lines becomming observable at higher temperatures. In the case of the Ub and U15R families, a luminescence line with lower energy than the prominent luminescence line appears at higher temperatures. The polarization and Zeeman measurements suggest that the defect has C3v symmetry.