Exchange-correlation effects and layer-thickness affect plasmon modes in gapped graphene-GaAs double-layer systems

2021 ◽  
Vol 94 (1) ◽  
Author(s):  
Phuong Dong Thi Kim ◽  
Men Van Nguyen
Keyword(s):  
Layer Thickness ◽  
Double Layer ◽  
Correlation Effects ◽  
Gapped Graphene ◽  
Exchange Correlation ◽  
Plasmon Modes

Plasmon modes in double-layer gapped graphene at zero temperature

2020 ◽  
Vol 384 (10) ◽  
pp. 126221 ◽  
Author(s):  
Nguyen Van Men ◽  
Dong Thi Kim Phuong
Keyword(s):  
Double Layer ◽  
Zero Temperature ◽  
Gapped Graphene ◽  
Plasmon Modes

scholarly journals Plasmon modes in Dirac–Schrödinger hybrid electron systems including layer-thickness and exchange-correlation effects

2018 ◽  
Vol 96 (6) ◽  
pp. 615-621 ◽  
Author(s):  
Nguyen Van Men ◽  
Nguyen Quoc Khanh
Keyword(s):  
Layer Thickness ◽  
Random Phase ◽  
Dielectric Constants ◽  
Monolayer Graphene ◽  
Correlation Effects ◽  
Layer System ◽  
Optical Branch ◽  
Exchange Correlation ◽  
Damping Rate ◽  
Double Layer System

We calculate the plasmon dispersion relation and damping rate of collective excitations in a double-layer system consisting of monolayer graphene and GaAs quantum well at zero temperature including layer-thickness and exchange-correlation effects. We use the generalized random-phase-approximation dielectric function and take into account the nonhomogeneity of the dielectric background of the system. We show that the effects of layer thickness, electron densities, and exchange-correlations are more pronounced for acoustic modes, while the optical branch depends remarkably on dielectric constants of the contacting media.

Plasmon modes in double-layer gapped graphene

2020 ◽  
Vol 118 ◽  
pp. 113859 ◽  
Author(s):  
Nguyen Van Men ◽  
Nguyen Quoc Khanh ◽  
Dong Thi Kim Phuong
Keyword(s):  
Double Layer ◽  
Gapped Graphene ◽  
Plasmon Modes

Plasmon modes in bilayer-graphene–GaAs heterostructures including layer-thickness and exchange-correlation effects

2018 ◽  
Vol 32 (23) ◽  
pp. 1850256 ◽  
Author(s):  
Nguyen Van Men ◽  
Dong Thi Kim Phuong
Keyword(s):  
Quantum Well ◽  
Layer Thickness ◽  
Random Phase ◽  
Bilayer Graphene ◽  
Monolayer Graphene ◽  
Layer System ◽  
Exchange Correlation ◽  
Quantum Well Width ◽  
Double Layer System ◽  
Plasmon Modes

We investigate the dispersion relation and decay rate of plasmon modes in a double-layer system made of bilayer graphene (BLG) and infinite GaAs quantum well at zero-temperature within the generalized random-phase-approximation and taking into account the 2DEG layer-thickness and inhomogeneity of the background dielectric. We illustrate that the acoustic plasmon dispersion curve of the considered system differs significantly from that of monolayer graphene (MLG)–GaAs heterostructure and BLG–GaAs without layer-thickness. Calculations also demonstrate that meanwhile the optical plasmon curve is affected slightly by spacer width and exchange-correlation, the acoustic one depends remarkably on the interlayer distance, inhomogeneity of the background dielectric, carrier densities, spacer dielectric constant, quantum well width and exchange-correlations.

scholarly journals Application of time-dependent current-density-functional theory to nonlocal exchange-correlation effects in polymers

2003 ◽  
Vol 118 (3) ◽  
pp. 1044-1053 ◽  
Author(s):  
M. van Faassen ◽  
P. L. de Boeij ◽  
R. van Leeuwen ◽  
J. A. Berger ◽  
J. G. Snijders
Keyword(s):  
Density Functional Theory ◽  
Current Density ◽  
Density Functional ◽  
Time Dependent ◽  
Correlation Effects ◽  
Functional Theory ◽  
Exchange Correlation

On the role of steric and exchange–correlation effects in halogenated complexes

2021 ◽  
Author(s):  
Mojtaba Alipour ◽  
Parisa Fallahzadeh
Keyword(s):  
Density Functional Theory ◽  
Density Functional ◽  
Energy Partitioning ◽  
Correlation Effects ◽  
Functional Theory ◽  
Exchange Correlation

Density functional theory formalisms of energy partitioning schemes are utilized to find out what energetic components govern interactions in halogenated complexes.

Revisiting Local Electric Fields on Close-Packed Metal Surfaces: Theory Versus Experiments

2007 ◽  
Vol 128 ◽  
pp. 219-224 ◽  
Author(s):  
P.P. Kostrobiy ◽  
Bogdan M. Markovych ◽  
Yuri Suchorski
Keyword(s):  
Electron Density ◽  
Electric Fields ◽  
Metal Surfaces ◽  
Integration Method ◽  
Functional Integration ◽  
Correlation Effects ◽  
Flat Surfaces ◽  
Exchange Correlation ◽  
Density Distributions ◽  
Theory Versus

An external electrostatic field of the order of a few tens of a volt per nanometer causes significant changes in the electron density distribution near a metal surface. Because of differing electronic distributions and varying responses of electrons to the applied field for various metals, the resulting local field distribution in the close vicinity of the surface should depend on the electronic properties of the particular metal, even for flat surfaces. Field-free and field-modified electron density distributions for different metal surfaces were calculated using the functional integration method. This approach enables the exchange-correlation effects to be correctly considered and makes it possible to account for the proper field-effect for broad field ranges without using the perturbation theory. The results of calculations are compared with the field-ion microscopic observations.

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