QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA

2003 ◽  
Vol 13 (04) ◽  
pp. 463-470 ◽  
Author(s):  
CHRISTIAN SCHMEISER ◽  
SHU WANG

The limit for vanishing Debye length (charge neutral limit) in a bipolar drift-diffusion model for semiconductors with general initial data allowing the presence of an initial layer is studied. The quasineutral limit (zero-Debye-length limit) is performed rigorously by using two different entropy functionals which yield appropriate uniform estimates. This investigation extends the results of Refs. 7 and 8 for charge neutral initial data where no initial layer occurs.

2006 ◽  
Vol 16 (04) ◽  
pp. 537-557 ◽  
Author(s):  
SHU WANG

In this paper the vanishing Debye length limit (space charge neutral limit) of bipolar time-dependent drift-diffusion models for semiconductors with p-n-junctions (i.e. with a fixed bipolar background charge) is studied in the multi-dimensional case. For generally smooth sign-changing doping profiles with good boundary conditions, the quasineutral limit (zero-Debye-length limit) is justified rigorously in the Sobolev's norm uniformly in time. The proof is based on the elaborate energy method and the relative entropy functional method which yields the uniform estimates with respect to the scaled Debye length.


2001 ◽  
Vol 12 (4) ◽  
pp. 497-512 ◽  
Author(s):  
INGENUIN GASSER ◽  
C. DAVID LEVERMORE ◽  
PETER A. MARKOWICH ◽  
CHRISTIAN SCHMEISER

The classical time-dependent drift-diffusion model for semiconductors is considered for small scaled Debye length (which is a singular perturbation parameter). The corresponding limit is carried out on both the dielectric relaxation time scale and the diffusion time scale. The latter is a quasineutral limit, and the former can be interpreted as an initial time layer problem. The main mathematical tool for the analytically rigorous singular perturbation theory of this paper is the (physical) entropy of the system.


2010 ◽  
Vol 20 (09) ◽  
pp. 1649-1679 ◽  
Author(s):  
QIANGCHANG JU ◽  
SHU WANG

This paper is devoted to the rigorous justification of the quasi-neutral limit of bipolar transient drift-diffusion models for semiconductors with p–n junctions in the multidimensional space. The general initial data and smooth sign-changing doping profiles with good boundary conditions are considered. The limit is performed rigorously by using multiple scaling asymptotic analysis, in which one main point is the construction of a more accurate approximate solution involving the effect of initial layer. The uniform estimates with respect to the scaled Debye length are obtained through the elaborate energy method and the relative entropy functional method.


2015 ◽  
Vol 122 (2) ◽  
pp. 312-336 ◽  
Author(s):  
Brandon M. Turner ◽  
Leendert van Maanen ◽  
Birte U. Forstmann

2014 ◽  
Vol 116 (19) ◽  
pp. 194504 ◽  
Author(s):  
Matthew P. Lumb ◽  
Myles A. Steiner ◽  
John F. Geisz ◽  
Robert J. Walters

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