Neural Substrates of the Drift-Diffusion Model in Brain Disorders

Many studies on the drift-diffusion model (DDM) explain decision-making based on a unified analysis of both accuracy and response times. This review provides an in-depth account of the recent advances in DDM research which ground different DDM parameters on several brain areas, including the cortex and basal ganglia. Furthermore, we discuss the changes in DDM parameters due to structural and functional impairments in several clinical disorders, including Parkinson's disease, Attention Deficit Hyperactivity Disorder (ADHD), Autism Spectrum Disorders, Obsessive-Compulsive Disorder (OCD), and schizophrenia. This review thus uses DDM to provide a theoretical understanding of different brain disorders.

Начальные стадии формирования импульсного разряда в промежутке с геометрией острие-плоскость в предварительно ионизированном аргоне

The study of the effect of the initial conditions on the features of the formation and development of the anodic ionization wave between two electrodes with a tip – plane gap geometry in argon at atmospheric pressure is performed on the basis of a two-dimensional axisymmetric drift-diffusion model.

Radiation Hardness of 4H-SiC P-N Junction UV Photo-Detector

4H-SiC based p-n junction UV photo-detectors were irradiated with 600 keV He+ in the fluence range of 5 × 1011 ÷ 5 × 1014 ion/cm2 in order to investigate their radiation hardness. The effects of irradiation on the electro-optical performance were monitored in dark condition and in the UV (200 ÷ 400 nm) range, as well as in the visible region confirming the typical visible blindness of unirradiated and irradiated SiC photo-sensors. A decrease of UV optical responsivity occurred after irradiation and two fluence regimes were identified. At low fluence (<1013 ions/cm2), a considerable reduction of optical responsivity (of about 50%) was measured despite the absence of relevant dark current changes. The presence of irradiation induced point defects and then the reduction of photo-generated charge lifetime are responsible for a reduction of the charge collection efficiency and then of the relevant optical response reduction: point defects act as recombination centers for the photo-generated charges, which recombine during the drift/diffusion toward the electrodes. At higher irradiation fluence, the optical responsivity is strongly reduced due to the formation of complex defects. The threshold between low and high fluence is about 100 kGy, confirming the radiation hardness of SiC photo-sensors.

On Liouville-type theorems for the 2D stationary MHD equations

We establish new Liouville-type theorems for the two-dimensional stationary magneto-hydrodynamic incompressible system assuming that the velocity and magnetic field have bounded Dirichlet integral. The key tool in our proof is observing that the stream function associated to the magnetic field satisfies a simple drift–diffusion equation for which a maximum principle is available.

Maximal regularity and a singular limit problem for the Patlak–Keller–Segel system in the scaling critical space involving BMO

We consider a singular limit problem of the Cauchy problem for the Patlak–Keller–Segel equation in a scaling critical function space. It is shown that a solution to the Patlak–Keller–Segel system in a scaling critical function space involving the class of bounded mean oscillations converges to a solution to the drift-diffusion system of parabolic-elliptic type (simplified Keller–Segel model) strongly as the relaxation time parameter $$\tau \rightarrow \infty $$ τ → ∞ . For the proof, we show generalized maximal regularity for the heat equation in the homogeneous Besov spaces and the class of bounded mean oscillations and we utilize them systematically as well as the continuous embeddings between the interpolation spaces $$\dot{B}^s_{q,\sigma }({\mathbb {R}}^n)$$ B ˙ q , σ s ( R n ) and $$\dot{F}^s_{q,\sigma }({\mathbb {R}}^n)$$ F ˙ q , σ s ( R n ) for the proof of the singular limit. In particular, end-point maximal regularity in BMO and space time modified class introduced by Koch–Tataru is utilized in our proof.

Optimization of Heat Transfer Process in Double Gate MOSFET Using Modified BDE Model

In this paper, a nonlinear electrical model is derived and is used to calculate the electric field and the current density. To corroborate our electrical model, it was compared to TCAD simulator. It was shown that the proposed model captures the current density with a good degree of agreement with TCAD simulator. The electrical model is given by the modified Drift-Diffusion (D-D) model coupled with the Ballistic-Diffusive Equation (BDE) which is able to predict the heat transfer phenomenon in the nanoscale regime. The thermal device performance is then investigated by varying device parameters including gate and drain biases with implementation of different gate dielectric to explore its response on thermal characteristics. It was further shown that the proposed electro-thermal model is able to predict the nano heat conduction in (DG) nanostructure devices. In addition, it is shown that the heat flux process could be controlled by adjusting the drain and gate voltages.

High-Efficiency Ultrathin Si-Based Solar Cells by Cascading Dilute-Nitride GaNAsP

Thin-film solar cells are currently an important research subject. In this study, a lattice-matched GaNAsP/Si tandem cell was designed. We adopted the drift-diffusion model to analyze the power conversion efficiency (PCE) of the solar cell. To find the maximum solar cell PCE, the recombination terms and the interlayer between subcells was omitted. For an optimal tandem cell PCE, this study analyzed the mole fraction combinations of GaNAsP and the thickness combinations between the GaNAsP and the Si subcells of the tandem cell. Our results showed the superiority of the tandem cell over the Si cell. The 4.5 μm tandem cell had a 12.7% PCE, the same as that of the 10.7 μm Si cell. The 11.5 μm tandem cell had 20.2% PCE, while the 11.5 μm Si cell processed 12.7% PCE. We also analyzed the Si subcell thickness ratio of sub-12 μm tandem cells for maximum PCE. The tandem cell with a thickness between 40% to 70% of a Si cell would have a max PCE. The ratio depended on the tandem cell thickness. We conclude that the lattice-matched GaNAsP/Si tandem cell has potential for ultrathin thin Si-based solar cell applications.

Methodological issues with value-based decision-making (VBDM) tasks: does trial wording matter?

Objective: Most value-based decision-making (VBDM) tasks instruct people to make value judgements about stimuli using wording relating to consumption, however in some contexts this may be inappropriate. This study aims to explore whether variations of trial wording capture a common construct of value. Method: Pre-registered, within-subject design. Fifty-nine participants completed a two-alternative forced choice task where they chose between two food images. Participants completed three blocks of trials: one asked which they would rather consume (standard wording), one asked which image they like more, and one asked them to recall which image they rated higher during a previous block. We fitted a drift-diffusion model to the reaction time and choice data to estimate evidence accumulation (EA) processes during the different blocks. Results: There was a highly significant main effect of trial difficulty, but this was not modified by trial wording (F = 2.00, p = .11, np2 = .03, BF10 = .05). We also found highly significant positive correlations between EA rates across task blocks (rs &gt; .44, ps &lt; .001). Conclusions: Findings provide initial validation of substitute wording for VBDM tasks that can be used in contexts where it may be undesirable to ask participants to make consummatory judgements.