Broadband fractional total internal reflection quasi phase matching based second harmonic generation in reverse tapered isotropic semiconductor considering the effect of nonlinear reflection

2015 ◽  
Vol 24 (04) ◽  
pp. 1550041 ◽  
Author(s):  
Minakshi Deb Barma ◽  
Sumita Deb ◽  
Ardhendu Saha

This paper analyzes a highly efficient broadband second-harmonic generator in the mid infrared region using an isotropic reverse tapered semiconductor slab configuration, using fractional total internal reflection quasi-phase matching technique. A computer aided simulation has been performed using ZnTe as the nonlinear material which provides an extremely high conversion efficiency of 22.94% with a 3[Formula: see text]dB bandwidth of 200[Formula: see text]nm. Effect of varying the slab dimensions on the performance parameters has also been analyzed. Finally, the catastrophic effect caused by destructive interference due to nonlinear law of reflection has also been incorporated in the analysis thereby giving more accurate results.

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