Evaluation of Densities and Energy Levels of Donors and Acceptors in Compensated Semiconductor from Temperature Dependence of Majority Carrier Concentration

1996 ◽  
Vol 35 (Part 1, No. 10) ◽  
pp. 5297-5298
Author(s):  
Hideharu Matsuura
Keyword(s):  
Temperature Dependence ◽  
Carrier Concentration ◽  
Energy Levels ◽  
Majority Carrier

Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron Irradiation

2011 ◽  
Vol 679-680 ◽  
pp. 181-184
Author(s):  
Hideharu Matsuura ◽  
Hideki Yanagisawa ◽  
Kozo Nishino ◽  
Takunori Nojiri ◽  
Shinobu Onoda ◽  
...  
Keyword(s):  
Energy Level ◽  
Temperature Dependence ◽  
Carrier Concentration ◽  
Electron Irradiation ◽  
Electron Concentration ◽  
Hole Concentration ◽  
Majority Carrier ◽  
P Type ◽  
Sublattice Site

The mechanisms for the reduction in the hole concentration in lightly Al-doped p-type 4H-SiC epilayers by electron irradiation as well as in the electron concentration in lightly N-doped n-type 4H-SiC epilayers by electron irradiation are investigated. In the p-type 4H-SiC epilayers, the temperature dependence of the hole concentration, , is not changed by 100 keV electron irradiation, while the is decreased by 150 keV electron irradiation. The density of Al acceptors with energy level eV decreases with increasing fluence of 150 keV electrons, whereas the density of deep acceptors with energy level eV increases. In the n-type 4H-SiC epilayers, the temperature dependence of the electron concentration, , is decreased by 200 keV electron irradiation. The density of N donors located at hexagonal C-sublattice sites decreases significantly with increasing fluence of 200 keV electrons, whereas the density of N donors located at cubic C-sublattice site decreases slightly.

Study of resistivity and majority carrier concentration of silicon damaged by neutron irradiation

1998 ◽  
Vol 61 (3) ◽  
pp. 456-463 ◽  
Author(s):  
N. Croitoru ◽  
R. Dahan ◽  
P.G. Rancoita ◽  
M. Rattaggi ◽  
G. Rossi ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Neutron Irradiation ◽  
Majority Carrier
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