Temperature Dependence of Intrinsic Carrier Concentration in InSb: Direct Determination by Helicon Interferometry

1972 ◽  
Vol 43 (4) ◽  
pp. 1825-1829 ◽  
Author(s):  
K. K. Chen ◽  
J. K. Furdyna
Keyword(s):  
Temperature Dependence ◽  
Carrier Concentration ◽  
Direct Determination ◽  
Intrinsic Carrier Concentration

scholarly journals Die Temperaturabhangigkeit der elektronischen Kenngrofien des eigenleitenden Siliciums

1977 ◽  
Vol 32 (7) ◽  
pp. 746-749 ◽  
Author(s):  
Th. Wasserrab
Keyword(s):  
Temperature Dependence ◽  
Carrier Concentration ◽  
Density Of States ◽  
Electric Resistance ◽  
Intrinsic Carrier Concentration ◽  
Effective Masses ◽  
Phenomenological Equations ◽  
Statistical Equation ◽  
Quantum Statistical

Abstract From phenomenological equations for the electric resistance and the electron and hole mobilities, the intrinsic carrier concentration is calculated (ni = 1.02 · 1010 cm-3 at T = 300 K) and its temperature dependence is derived. Correlation with a well-known quantum-statistical equation delivers the temperature dependence of the density-of-states effective masses.

The direct determination of the temperature dependence of the refractive index of liquids and solids

1976 ◽  
Vol 9 (14) ◽  
pp. 1945-1951 ◽  
Author(s):  
G Abbate ◽  
A Attanasio ◽  
U Bernini ◽  
E Ragozzino ◽  
F Somma
Keyword(s):  
Refractive Index ◽  
Temperature Dependence ◽  
Direct Determination

Enhancement of Intrinsic Carrier Concentration in the Active Layer of Solar Cell Using Indium Nitride Quantum Dot

2015 ◽  
Vol 793 ◽  
pp. 435-439 ◽  
Author(s):  
M.A. Humayun ◽  
M.A. Rashid ◽  
F. Malek ◽  
S.B. Yaakob ◽  
A.Z. Abdullah ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Carrier Concentration ◽  
Density Of States ◽  
Active Layer ◽  
Cell Structure ◽  
Indium Nitride ◽  
Effective Density ◽  
Intrinsic Carrier Concentration ◽  
Solar Cell Structure

This paper presents the improvement of intrinsic carrier concentrations in the active layer of solar cell structure using Indium Nitride quantum dot as the active layer material. We have analyzed effective density of states in conduction band and valance band of the solar cell numerically using Si, Ge and InN quantum dot in the active layer of the solar cell structure in order to improve the intrinsic carrier concentration within the active layer of the solar cell. Then obtained numerical results were compared. From the comparison results it has been revealed that the application of InN quantum dot in the active layer of the device structure improves the effective density of states both in conduction band and in the valance band. Consiquently the intrinsic carrier concentration has been improved significently by using InN quantum dot in the solart cell structure.

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