Effect of Dislocations on Low-Temperature Thermal Conductivity and Specific Heat of Copper-Aluminum Alloy Crystals

1975 ◽  
Vol 39 (3) ◽  
pp. 698-707 ◽  
Author(s):  
Yoshiaki Kogure ◽  
Yosio Hiki
1962 ◽  
Vol 17 (10) ◽  
pp. 886-889 ◽  
Author(s):  
Y. Baer ◽  
G. Busch ◽  
C. Fröhlich ◽  
E. Steigmeier

The thermal conductivity, electrical conductivity. Hall coefficient und thermoelectric power of Ag2Se have been measured between 80 and 600°K. In the low temperature semiconductor phase the thermal conductivity increases with increasing temperature due to the high amount of carrier contribution. The latter has been calculated using the Price formula. Agreement with experiment is satisfactory. The specific heat has been measured between 30 and 200°C. For the latent heat a value of (5.7 ± 0.5) cal/gr was determined in agreement with measurements of Bellati and Lussana 4. In addition to the transition at 133 °C an unknown new transition has been found at about 90 °C.


1995 ◽  
Vol 98 (5-6) ◽  
pp. 517-547 ◽  
Author(s):  
A. Nittke ◽  
M. Scherl ◽  
P. Esquinazi ◽  
W. Lorenz ◽  
Junyun Li ◽  
...  

1972 ◽  
Vol 6 (2) ◽  
pp. 356-363 ◽  
Author(s):  
A. J. Friedman ◽  
T. K. Chu ◽  
P. G. Klemens ◽  
C. A. Reynolds

1996 ◽  
Vol 46 (S5) ◽  
pp. 2589-2590 ◽  
Author(s):  
S. Chastin ◽  
D. T. Adroja ◽  
D. F. Brewer ◽  
T. Hargreaves ◽  
C. S. McMenamin ◽  
...  

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