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Influence of Titanium Content on the Structural and Electrical Properties of Er[sub 1−x]Ti[sub x]O[sub y] Gate Dielectrics
Journal of The Electrochemical Society
◽
10.1149/1.2839556
◽
2008
◽
Vol 155
(4)
◽
pp. H247
◽
Cited By ~ 3
Author(s):
Tung-Ming Pan
◽
Wei-Hao Shu
Keyword(s):
Electrical Properties
◽
Gate Dielectrics
◽
Titanium Content
◽
Structural And Electrical Properties
Download Full-text
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10.1149/ma2007-01/12/565
◽
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Structural and electrical properties of Zr oxide film for high-k gate dielectrics by using electron cyclotron resonance plasma sputtering
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◽
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◽
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◽
Vol 80
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◽
pp. 1781-1787
◽
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◽
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◽
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◽
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◽
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◽
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◽
Cyclotron Resonance
◽
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◽
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◽
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Structural and electrical properties of neodymium oxide high-k gate dielectrics
Applied Physics Letters
◽
10.1063/1.2402237
◽
2006
◽
Vol 89
(23)
◽
pp. 232908
◽
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Author(s):
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◽
Jian-Der Lee
◽
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◽
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Keyword(s):
Electrical Properties
◽
Gate Dielectrics
◽
Neodymium Oxide
◽
High K
◽
Structural And Electrical Properties
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DyScHfOx as High-κ Gate Dielectrics: Structural and Electrical Properties
ECS Transactions
◽
10.1149/1.2727394
◽
2019
◽
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(1)
◽
pp. 113-120
Author(s):
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◽
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◽
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◽
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◽
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◽
...
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Electrical Properties
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Structural And Electrical Properties
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Effects of Oxygen Content on the Structural and Electrical Properties of Thin Yb[sub 2]O[sub 3] Gate Dielectrics
Journal of The Electrochemical Society
◽
10.1149/1.3005993
◽
2009
◽
Vol 156
(1)
◽
pp. G6
◽
Cited By ~ 22
Author(s):
Tung-Ming Pan
◽
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Keyword(s):
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◽
Oxygen Content
◽
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◽
Structural And Electrical Properties
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Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers
Applied Physics Letters
◽
10.1063/1.1583143
◽
2003
◽
Vol 82
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◽
pp. 4331-4333
◽
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◽
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◽
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◽
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◽
...
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Gate Dielectrics
◽
Structural And Electrical Properties
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Structural and Electrical Properties of High-k HoTiO3 Gate Dielectrics
ECS Meeting Abstracts
◽
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◽
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Keyword(s):
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◽
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Structural and electrical properties of HfO[sub x]N[sub y] and HfO[sub 2] gate dielectrics in TaN gated nMOSCAP and nMOSFET devices
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
◽
10.1116/1.1771664
◽
2004
◽
Vol 22
(4)
◽
pp. 1755
◽
Cited By ~ 23
Author(s):
Kyu-Jeong Choi
◽
Jeon-Ho Kim
◽
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◽
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Structural and electrical properties of high-κ Al2O3-ZrO2 gate dielectrics on SOI substrate
10.1117/12.608038
◽
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◽
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◽
G. S. Ye
◽
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Structural and Electrical Properties of High-k HoTiO3 Gate Dielectrics
ECS Transactions
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10.1149/1.3375607
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pp. 241-245
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