Structural and electrical properties of Zr oxide film for high-k gate dielectrics by using electron cyclotron resonance plasma sputtering

Applied Physics A ◽

10.1007/s00339-003-2483-z ◽

2004 ◽

Vol 80 (8) ◽

pp. 1781-1787 ◽

Author(s):

J. Wang ◽

L. Zhao ◽

N. H.Luu ◽

D. Wang ◽

H. Nakashima

Keyword(s):

Electrical Properties ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Gate Dielectrics ◽

Electron Cyclotron ◽

Plasma Sputtering ◽

High K ◽

Structural And Electrical Properties ◽

Resonance Plasma

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Structural and electrical properties of thin microcrystalline silicon films deposited by an electron cyclotron resonance plasma discharge of 2% SiH4/Ar further diluted in H2

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581481 ◽

1998 ◽

Vol 16 (5) ◽

pp. 2751-2756 ◽

Author(s):

B. B. Jagannathan ◽

R. L. Wallace ◽

W. A. Anderson

Keyword(s):

Electrical Properties ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Plasma Discharge ◽

Electron Cyclotron ◽

Silicon Films ◽

Microcrystalline Silicon ◽

Electron Cyclotron Resonance Plasma ◽

Structural And Electrical Properties ◽

Resonance Plasma

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In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering

IEICE Transactions on Electronics ◽

10.1587/transele.2019fup0001 ◽

2020 ◽

Vol E103.C (6) ◽

pp. 299-303 ◽

Author(s):

Shun-ichiro OHMI ◽

Shin ISHIMATSU ◽

Yuske HORIUCHI ◽

Sohya KUDOH

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Gate Insulator ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Nitridation ◽

Plasma Sputtering ◽

High K ◽

Resonance Plasma

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Effect of ion energy on structural and electrical properties of intrinsic microcrystalline silicon layer deposited in a matrix distributed electron cyclotron resonance plasma reactor

physica status solidi (a) ◽

10.1002/pssa.200982905 ◽

2010 ◽

Vol 207 (3) ◽

pp. 591-594 ◽

Author(s):

Sanjay K. Ram ◽

Laurent Kroely ◽

Pavel Bulkin ◽

Pere Roca i Cabarrocas

Keyword(s):

Electrical Properties ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Plasma Reactor ◽

Silicon Layer ◽

Electron Cyclotron ◽

Microcrystalline Silicon ◽

Structural And Electrical Properties ◽

Resonance Plasma

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Preparation of Bismuth Titanate Films by Electron Cyclotron Resonance Plasma Sputtering-Chemical Vapor Deposition

Journal de Physique IV (Proceedings) ◽

10.1051/jphyscol:1995580 ◽

1995 ◽

Vol 05 (C5) ◽

pp. C5-671-C5-677

Author(s):

H. Masumoto ◽

T. Hirai

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Bismuth Titanate ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Sputtering ◽

Resonance Plasma

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The Structure and Bonding State for Fullerene-Like Carbon Nitride Films with High Hardness Formed by Electron Cyclotron Resonance Plasma Sputtering

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.125602 ◽

2012 ◽

Vol 51 ◽

pp. 125602 ◽

Author(s):

Tomoyuki Kamata ◽

Osamu Niwa ◽

Shigeru Umemura ◽

Shigeru Hirono

Keyword(s):

Cyclotron Resonance ◽

Carbon Nitride ◽

Electron Cyclotron Resonance ◽

High Hardness ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Bonding State ◽

Plasma Sputtering ◽

Structure And Bonding ◽

Resonance Plasma

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Electrical properties of electron cyclotron resonance plasma-deposited silicon dioxide: effect of the oxygen to silane flow ratio

Semiconductor Science and Technology ◽

10.1088/0268-1242/11/3/023 ◽

1996 ◽

Vol 11 (3) ◽

pp. 422-426 ◽

Author(s):

M J Hernandez ◽

J Garrido ◽

J Martinez ◽

J Piqueras

Keyword(s):

Electrical Properties ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Electrical Characterisation of Gate Dielectrics Deposited with Multipolar Electron Cyclotron Resonance Plasma Source

30th European Solid-State Device Research Conference ◽

10.1109/essderc.2000.194805 ◽

2000 ◽

Author(s):

G.I. Isai ◽

A.Y. Kovalgin ◽

J. Holleman ◽

P.H. Woerlee ◽

H. Wallinga ◽

...

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Gate Dielectrics ◽

Plasma Source ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Optical Properties of c-Axis Oriented Ba2NaNb5O15 Thin Films Formed by Electron Cyclotron Resonance Plasma Sputtering

Journal of the Ceramic Society of Japan ◽

10.2109/jcersj.105.687 ◽

1997 ◽

Vol 105 (1224) ◽

pp. 687-689

Author(s):

Akira WATAZU ◽

Hiroshi MASUMOTO ◽

Yoichiro MASUDA ◽

Toshio HIRAI

Keyword(s):

Optical Properties ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Sputtering ◽

Resonance Plasma

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Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma

Journal of Applied Physics ◽

10.1063/1.349264 ◽

1991 ◽

Vol 70 (6) ◽

pp. 3301-3313 ◽

Author(s):

D. A. Carl ◽

D. W. Hess ◽

M. A. Lieberman ◽

T. D. Nguyen ◽

R. Gronsky

Keyword(s):

Electrical Properties ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Dc Bias ◽

Resonance Plasma

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Electrical properties of GaAs selectively grown by electron cyclotron resonance plasma‐excited molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.105221 ◽

1991 ◽

Vol 58 (6) ◽

pp. 604-606 ◽

Author(s):

Norio Yamamoto ◽

Naoto Kondo ◽

Yasushi Nanishi

Keyword(s):

Electrical Properties ◽

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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