InAs/GaAs quantum dot single-section mode-locked lasers monolithically grown on Si (001) substrate with resonant optical feedback

Author(s):  
Zi-Hao Wang ◽  
Wen-Qi Wei ◽  
Qi Feng ◽  
Jing-Jing Guo ◽  
Ming-Chen Guo ◽  
...  
2021 ◽  
Vol 29 (2) ◽  
pp. 674
Author(s):  
Zi-Hao Wang ◽  
Wen-Qi Wei ◽  
Qi Feng ◽  
Ting Wang ◽  
Jian-Jun Zhang

2018 ◽  
Vol 35 (11) ◽  
pp. 2780 ◽  
Author(s):  
Heming Huang ◽  
Jianan Duan ◽  
Daehwan Jung ◽  
Alan Y. Liu ◽  
Zeyu Zhang ◽  
...  

2018 ◽  
Vol 43 (2) ◽  
pp. 210 ◽  
Author(s):  
Lyu-Chih Lin ◽  
Chih-Ying Chen ◽  
Heming Huang ◽  
Dejan Arsenijević ◽  
Dieter Bimberg ◽  
...  

2018 ◽  
Vol 26 (2) ◽  
pp. 1743 ◽  
Author(s):  
Heming Huang ◽  
Lyu-Chih Lin ◽  
Chih-Ying Chen ◽  
Dejan Arsenijević ◽  
Dieter Bimberg ◽  
...  

Crystals ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 980
Author(s):  
Xia-Yida MaXueer ◽  
Yi-Ming He ◽  
Zun-Ren Lv ◽  
Zhong-Kai Zhang ◽  
Hong-Yu Chai ◽  
...  

Aiming to realize high-speed optical transmitters for isolator-free telecommunication systems, 1.3 μm p-modulation doped InGaAs/GaAs quantum dot (QD) lasers with a 400 μm long cavity have been reported. Compared with the un-doped QD laser as a reference, the p-doped QD laser emits at ground state, with an ultra-low threshold current and a high maximum output power. The p-doped QD laser also shows enhanced dynamic characteristics, with a 10 Gb/s large-signal direct modulation rate and a 7.8 GHz 3dB-bandwidth. In addition, the p-doped QD laser exhibits a strong coherent optical feedback resistance, which might be beyond −9 dB.


Author(s):  
Soroush A. Alisobhani ◽  
David T. Childs ◽  
Keizo Takemasa ◽  
Kenichi Nishi ◽  
Mitsuru Sugawara ◽  
...  

Author(s):  
Frédéric Grillot ◽  
Dieter Bimberg ◽  
Fan-Yi Lin ◽  
Heming Huang ◽  
Lyu-Chih Lin ◽  
...  

AIP Advances ◽  
2016 ◽  
Vol 6 (12) ◽  
pp. 125114 ◽  
Author(s):  
H. Huang ◽  
D. Arsenijević ◽  
K. Schires ◽  
T. Sadeev ◽  
D. Bimberg ◽  
...  

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