Integrated Amorphous Silicon-Aluminum Long-Range Surface Plasmon Polaritons (LR-SPP) Waveguides

Author(s):  
Boaz Sturlesi ◽  
Meir Grajower ◽  
Noa Mazurski ◽  
Uriel Levy
2005 ◽  
Vol 22 (9) ◽  
pp. 2027 ◽  
Author(s):  
Alexandra Boltasseva ◽  
Thomas Søndergaard ◽  
Thomas Nikolajsen ◽  
Kristjan Leosson ◽  
Sergey I. Bozhevolnyi ◽  
...  

2011 ◽  
Vol 9 (11) ◽  
pp. 110014-110016 ◽  
Author(s):  
Yichen Zhang Yichen Zhang ◽  
Audrey Berrier Audrey Berrier ◽  
Jaime Gomez Rivas Jaime Gomez Rivas

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Tsung-Han Tsai ◽  
Ming-Yi Lin ◽  
Wing-Kit Choi ◽  
Hoang Yan Lin

We investigated experimentally the plasmon-enhanced photoluminescence of the amorphous silicon quantum dots (a-Si QDs) light-emitting devices (LEDs) with theAg/SiOx:a-Si QDs/Ag sandwich nanostructures, through the coupling between the a-Si QDs and localized surface plasmons polaritons (LSPPs) mode, by tuning a one-dimensional (1D) Ag grating on the top. The coupling of surface plasmons at the top and bottomAg/SiOx:a-Si QDs interfaces resulted in the localized surface plasmon polaritons (LSPPs) confined underneath the Ag lines, which exhibit the Fabry-Pérot resonance. From the Raman spectrum, it proves the existence of a-Si QDs embedded in Si-richSiOxfilm (SiOx:a-Si QDs) at a low annealing temperature (300°C) to prevent the possible diffusion of Ag atoms from Ag film. The photoluminescence (PL) spectra of a-Si QDs can be precisely tuned by a 1D Ag grating with different pitches and Ag line widths were investigated. An optimized Ag grating structure, with 500 nm pitch and 125 nm Ag line width, was found to achieve up to 4.8-fold PL enhancement at 526 nm and 2.46-fold PL integrated intensity compared to the a-Si QDs LEDs without Ag grating structure, due to the strong a-Si QDs-LSPPs coupling.


2005 ◽  
Vol 13 (11) ◽  
pp. 4237 ◽  
Author(s):  
Alexandra Boltasseva ◽  
Sergey I. Bozhevolnyi ◽  
Thomas Søndergaard ◽  
Thomas Nikolajsen ◽  
Kristjan Leosson

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