Spontaneous-emission factor of semiconductor diode lasers

1991 ◽  
Vol 8 (4) ◽  
pp. 747 ◽  
Author(s):  
Daniel T. Cassidy
1981 ◽  
Vol 17 (24) ◽  
pp. 933 ◽  
Author(s):  
W. Streifer ◽  
D.R. Scifres ◽  
R.D. Burnham

Photonics ◽  
2021 ◽  
Vol 8 (8) ◽  
pp. 340
Author(s):  
Daniel T. Cassidy

Gain, spontaneous emission, and reflectance play important roles in setting the spectral output of homogeneously broadened lasers, such as semiconductor diode lasers. This paper provides a restricted-in-scope review of the steady-state spectral properties of semiconductor diode lasers. Analytic but transcendental solutions for a simplified set of equations for propagation of modes through a homogeneously broadened gain section are used to create a Fabry–Pérot model of a diode laser. This homogeneously broadened Fabry–Pérot model is used to explain the spectral output of diode lasers without the need for guiding-enhanced capture of spontaneous emission, population beating, or non-linear interactions. It is shown that the amount of spontaneous emission and resonant enhancement of the reflectance-gain (RG) product as embodied in the presented model explains the observed spectral output. The resonant enhancement is caused by intentional and unintentional internal scattering and external feedback.


1994 ◽  
Vol 107 (3-4) ◽  
pp. 249-254 ◽  
Author(s):  
S.J.M. Kuppens ◽  
H. van Kampen ◽  
M.P. van Exter ◽  
J.P. Woerdman

2013 ◽  
Vol 19 (4) ◽  
pp. 1900812-1900812 ◽  
Author(s):  
F. Grillot ◽  
Cheng Wang ◽  
N. A. Naderi ◽  
J. Even

1996 ◽  
Vol 68 (11) ◽  
pp. 351A-356A ◽  
Author(s):  
Kay Niemax ◽  
Aleksandr Zybin ◽  
Christoph Schnürer-Patschan ◽  
Henning Groll

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