Uncertainty of a Millimeter-Wave Variable Noise Source using a Variable Attenuator

2011 ◽  
Vol 131 (4) ◽  
pp. 302-303
Author(s):  
Hitoshi Iida ◽  
Takayuki Inaba ◽  
Yozo Shimada ◽  
Koji Komiyama
Keyword(s):  
Millimeter Wave ◽  
Noise Source ◽  
Wave Variable ◽  
Variable Attenuator

Millimeter-Wave Noise Source Development on SiGe BiCMOS 55-nm Technology for Applications up to 260 GHz

2019 ◽  
Vol 67 (9) ◽  
pp. 3732-3742 ◽  
Author(s):  
Joao Carlos Azevedo Goncalves ◽  
Haitham Ghanem ◽  
Simon Bouvot ◽  
Daniel Gloria ◽  
Sylvie Lepilliet ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Noise Source ◽  
Sige Bicmos

Millimeter-Wave SiGe Radiometer Front End With Transformer-Based Dicke Switch and On-Chip Calibration Noise Source

2021 ◽  
pp. 1-1
Author(s):  
Milad Frounchi ◽  
Amirreza Alizadeh ◽  
Hanbin Ying ◽  
Christopher T. Coen ◽  
Albin J. Gasiewski ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Noise Source ◽  
Front End ◽  
On Chip

scholarly journals A Photogenerated Silicon Plasma Waveguide Switch and Variable Attenuator for Millimeter-Wave Applications

2021 ◽  
Author(s):  
Thomas Jones ◽  
Alden Fisher ◽  
Douglas W. Barlage ◽  
Dimitrios Peroulis
Keyword(s):  
Solid State ◽  
Millimeter Wave ◽  
High Performance ◽  
Optical Power ◽  
Plasma Waveguide ◽  
Bulk Silicon ◽  
Switching Element ◽  
Variable Attenuator ◽  
Signal Path ◽  
Rf Signal

This paper reports the design, fabrication, and measurement of a millimeter-wave solid-state ?pi-match waveguide switch using bulk silicon micromachining. A photogenerated plasma within a silicon post is utilized as the switching element within the waveguide channel. Not only does this isolate the switch bias network from the RF signal path, but allows for tuning of the OFF-state isolation with increasing optical power for application as a variable attenuator. A measured OFF-state isolation greater than 25 dB up to 40 GHz is reported, with a measured extracted ON-state insertion loss of 0.52 dB at 35 GHz, and less than 0.88 dB across the entire band from 30-40 GHz. The proposed switch illustrates the significant potential for photogenerated silicon plasma switching of high-performance bulk micromachined millimeter-wave waveguides.

scholarly journals A Photogenerated Silicon Plasma Waveguide Switch and Variable Attenuator for Millimeter-Wave Applications

2021 ◽  
Author(s):  
Thomas Jones ◽  
Alden Fisher ◽  
Douglas W. Barlage ◽  
Dimitrios Peroulis
Keyword(s):  
Solid State ◽  
Millimeter Wave ◽  
High Performance ◽  
Optical Power ◽  
Plasma Waveguide ◽  
Bulk Silicon ◽  
Switching Element ◽  
Variable Attenuator ◽  
Signal Path ◽  
Rf Signal

This paper reports the design, fabrication, and measurement of a millimeter-wave solid-state ?pi-match waveguide switch using bulk silicon micromachining. A photogenerated plasma within a silicon post is utilized as the switching element within the waveguide channel. Not only does this isolate the switch bias network from the RF signal path, but allows for tuning of the OFF-state isolation with increasing optical power for application as a variable attenuator. A measured OFF-state isolation greater than 25 dB up to 40 GHz is reported, with a measured extracted ON-state insertion loss of 0.52 dB at 35 GHz, and less than 0.88 dB across the entire band from 30-40 GHz. The proposed switch illustrates the significant potential for photogenerated silicon plasma switching of high-performance bulk micromachined millimeter-wave waveguides.

scholarly journals Fast physical random bit generation using a novel millimeter-wave white noise source

2022 ◽  
Author(s):  
Ya Guo ◽  
Wen-Jie Liu ◽  
Yimin Huang ◽  
YueHui sun ◽  
Romain Zinsou ◽  
...  
Keyword(s):  
White Noise ◽  
Millimeter Wave ◽  
Noise Source
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