switching element
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Author(s):  
Mustafa Taha Hussein Al-Musawi ◽  
Aeizaal Azman A. Wahab ◽  
Mustafa S. Aljuamily

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Anu Kumari ◽  
Vivek Kumar Srivastava ◽  
Amrindra Pal ◽  
Sandeep Sharma

Abstract In this work, a high-performance multioperation bit-manipulator is presented. The presented electro-optical design can perform several bit-manipulations such as bidirectional bit-shifting, bit-rotation, multiply-by-2 and divide-by-2, and sequence designing operation. The technique relies on the electrooptic principle in lithium niobate. Lithium niobate-based waveguides have been used to design Mach–Zehnder interferometer, which is the fundamental optical switching element of the whole model. Extinction ratio, contrast ratio, and insertion loss values computed for the simulated results are 29.16 dB, 29.48 dB, and 0.77 dB, respectively.


2021 ◽  
Author(s):  
Thomas Jones ◽  
Alden Fisher ◽  
Douglas W. Barlage ◽  
Dimitrios Peroulis

This paper reports the design, fabrication, and measurement of a millimeter-wave solid-state ?pi-match waveguide switch using bulk silicon micromachining. A photogenerated plasma within a silicon post is utilized as the switching element within the waveguide channel. Not only does this isolate the switch bias network from the RF signal path, but allows for tuning of the OFF-state isolation with increasing optical power for application as a variable attenuator. A measured OFF-state isolation greater than 25 dB up to 40 GHz is reported, with a measured extracted ON-state insertion loss of 0.52 dB at 35 GHz, and less than 0.88 dB across the entire band from 30-40 GHz. The proposed switch illustrates the significant potential for photogenerated silicon plasma switching of high-performance bulk micromachined millimeter-wave waveguides.


2021 ◽  
Author(s):  
Thomas Jones ◽  
Alden Fisher ◽  
Douglas W. Barlage ◽  
Dimitrios Peroulis

This paper reports the design, fabrication, and measurement of a millimeter-wave solid-state ?pi-match waveguide switch using bulk silicon micromachining. A photogenerated plasma within a silicon post is utilized as the switching element within the waveguide channel. Not only does this isolate the switch bias network from the RF signal path, but allows for tuning of the OFF-state isolation with increasing optical power for application as a variable attenuator. A measured OFF-state isolation greater than 25 dB up to 40 GHz is reported, with a measured extracted ON-state insertion loss of 0.52 dB at 35 GHz, and less than 0.88 dB across the entire band from 30-40 GHz. The proposed switch illustrates the significant potential for photogenerated silicon plasma switching of high-performance bulk micromachined millimeter-wave waveguides.


2021 ◽  
pp. 138302
Author(s):  
Štěpánka Nováková Lachmanová ◽  
František Vavrek ◽  
Táňa Sebechlebská ◽  
Viliam Kolivoška ◽  
Michal Valášek ◽  
...  

Author(s):  
Shilpa Gupta ◽  
Gobind Lal Pahuja

Background: VLSI technology advancements have resulted the requirements of high computational power, which can be achieved by implementing multiple processors in parallel. These multiple processors have to communicate with their memory modules by using Interconnection Networks (IN). Multistage Interconnection networks (MIN) are used as IN, as they provide efficient computing with low cost. Objective: the objective of the study is to introduce new reliable Gamma MIN named as a Modified Gamma Interconnection Network (MGIN), which provide reliability and fault-tolerance with less number of stages of Switching element only. Method: Switching Element (SE) of bigger size i.e. 2×3/3×2 has been employed at input/output stages inspite of 1×3/3×1 sized SE at input/output stages with reduction in one intermidiate stage. Fault tolerance has been introduced in the form of disjoint paths formed between each source-destnation node pair. Hence reliability has been improved. Results: Terminal, Broadcast and Network Reliability has been evaluated by using Reliability Block Diagrams for each source-destination node pair. The results have been shown, which depicts the higher reliability values for newly proposed network. The cost analysis shows that new MGIN is a cheaper network than other Gamma variants. Conclusion: MGIN has better reliability and Fault-tolerance than priviously proposed Gamma MIN.


Multistage Interconnection Network (MIN) has been researched for the interconnection implementation of switches and multiprocessors. The topology of the interconnection, the number of stage and the switching element used in the network distinguish between each MIN's tolerance of failure.This paper introduces a topology called Replicated Shuffle Exchange Network and Replicated Augmented Shuffle Exchange Network. A replicated technique is described for making the network more reliable. The replicated technique results in reduced the Mean Time to Failure in the network. Performance measurement shows that replicated network achieve a significant improvement over a basic network have been measured.


Author(s):  
Igor Olegovich Barabanov ◽  
Elizaveta Aleksandrovna Barabanova ◽  
Konstantin Vytovtov ◽  
Natalia Sergeevna Maltseva

The main objective in improving optical communication systems, which are widely developed nowadays, is a solution of the problem of operation speed of the entire commutation system, which is limited by quick action of the outer elements of the management system. There have been presented the structure and algorithm of a radically new commutation system based on the 4x4 optical switch operation. The specific feature of the switch operation is the lack of external control over switching process. The operation principle of the main element of the 4×4 optical switch - an optical switching element - has been considered. The switching element is a photonic crystal consisting of a layer of metamaterial, a dielectric substance and ferrite films. The results of the numerical simulation of the switch are presented. The analysis of results allows to infer that the proposed switch can be used in modern communication systems.


2018 ◽  
Vol 112 (18) ◽  
pp. 182401 ◽  
Author(s):  
R. Ahmed ◽  
R. H. Victora

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