Study of SiC Device for Pulsed Power Switching Circuit

2019 ◽  
Vol 139 (8) ◽  
pp. 345-350
Author(s):  
Toru Tagawa ◽  
Tomohiko Yamashita ◽  
Takashi Sakugawa ◽  
Sunao Katsuki ◽  
Kenzi Hukuda ◽  
...  
Keyword(s):  
Pulsed Power ◽  
Switching Circuit ◽  
Power Switching

scholarly journals Study of SiC device for pulsed power switching circuit

2019 ◽  
Vol 209 (1-2) ◽  
pp. 3-9 ◽  
Author(s):  
Toru Tagawa ◽  
Tomohiko Yamashita ◽  
Takashi Sakugawa ◽  
Sunao Katsuki ◽  
Kenzi Hukuda ◽  
...  
Keyword(s):  
Pulsed Power ◽  
Switching Circuit ◽  
Power Switching

Simulation analysis of pulsed power switching circuit in laser power supply

2013 ◽  
Vol 25 (7) ◽  
pp. 1873-1876
Author(s):  
李化 Li Hua ◽  
林菊平 Lin Juping ◽  
李智威 Li Zhiwei ◽  
林福昌 Lin Fuchang
Keyword(s):  
Power Supply ◽  
Laser Power ◽  
Simulation Analysis ◽  
Pulsed Power ◽  
Switching Circuit ◽  
Power Switching ◽  
Laser Power Supply

Using reverse dynamic I–V characteristics of AlGaAs/GaAs optothyristor for pulsed power-switching applications

1992 ◽  
Vol 28 (11) ◽  
pp. 977-979 ◽  
Author(s):  
J.H. Zhao ◽  
T. Burke ◽  
D. Larson ◽  
M. Weiner ◽  
A. Chin ◽  
...  
Keyword(s):  
Pulsed Power ◽  
Power Switching

A novel high power optothyristor based on AlGaAs/GaAs for pulsed power-switching applications

1994 ◽  
Vol 41 (5) ◽  
pp. 819-825 ◽  
Author(s):  
J.H. Zhao ◽  
T. Burke ◽  
M. Weiner ◽  
A. Chin ◽  
J.M. Ballingall
Keyword(s):  
High Power ◽  
Pulsed Power ◽  
Power Switching

The Materials Properties of a Nickel Based Composite Contact to n-Sic for Pulsed Power Switching

2000 ◽  
Vol 622 ◽  
Author(s):  
M. W. Cole ◽  
P. C. Joshi ◽  
F. Ren ◽  
C. W. Hubbard ◽  
M. C. Wood ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Pulsed Power ◽  
Power Switching ◽  
Semiconductor Interface ◽  
Carbide Phases ◽  
Annealing Temperatures ◽  
Ohmic Behavior ◽  
Reaction Region ◽  
Composite Contact ◽  
Surface Morphologies

ABSTRACTNovel Ni/WSi/Ti/Pt composite Ohmic contacts to n-SiC were investigated as a function of annealing temperatures up to 1000°C. The onset of Ohmic behavior occurred at annealing temperatures of 900°C. Annealing at temperatures between 950°and 1000°C yielded excellent Ohmic behavior. At these temperatures the contact-SiC interface was smooth, defect free and characterized by a narrow Ni2Si reaction region. The annealed contacts possessed atomically smooth surface morphologies and exhibited minimal contact expansion. The residual carbon, resultant from SiC decomposition, was constrained by reaction with the WSi and Ti metallization layers forming carbide phases of W and Ti. The locations of the carbide phases were spatially distant from the metal semiconductor interface. Our results demonstrate that the Ni/WSi/Ti/Pt composite Ohmic contact maintains the desirable electrical properties associated with Ni contacts and possess excellent interfacial, compositional and surface properties which are required for reliable high power and high temperature device operation.

Pulsed power switching using saturable core inductors

1982 ◽  
Vol 53 (3) ◽  
pp. 2765-2767 ◽  
Author(s):  
M. Stockton ◽  
E. L. Neau ◽  
J. P. VanDevender
Keyword(s):  
Pulsed Power ◽  
Power Switching

Sensitive optical gating of reverse-biased AlGaAs/GaAs optothyristors for pulsed power switching applications

1993 ◽  
Vol 40 (4) ◽  
pp. 817-823 ◽  
Author(s):  
J.H. Zhao ◽  
T. Burke ◽  
D. Larson ◽  
M. Weiner ◽  
A. Chin ◽  
...  
Keyword(s):  
Pulsed Power ◽  
Power Switching ◽  
Optical Gating
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