IEEE Transactions on Electron Devices
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27403

(FIVE YEARS 1172)

H-INDEX

214

(FIVE YEARS 1)

Published By Institute Of Electrical And Electronics Engineers

1557-9646, 0018-9383

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

A New Surface Potential-Based Analytical Model for MFIS NCFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3138364 ◽

2022 ◽

pp. 1-8

Author(s):

Anuj Pahariya ◽

Aloke K. Dutta

Keyword(s):

Analytical Model ◽

Surface Potential

Static Performance and Threshold Voltage Stability Improvement of Al₂O₃/LaAlO₃/SiO₂ Gate-Stack for SiC Power MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3138378 ◽

2022 ◽

pp. 1-6

Author(s):

Linhua Huang ◽

Yong Liu ◽

Xin Peng ◽

Yuichi Onozawa ◽

Takashi Tsuji ◽

...

Keyword(s):

Threshold Voltage ◽

Voltage Stability ◽

Gate Stack ◽

Power Mosfets ◽

Static Performance

Barrier Lowering-Induced Capacitance Increase of Short-Channel Power p-GaN HEMTs at High Temperature

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3139561 ◽

2022 ◽

pp. 1-5

Author(s):

Yajie Xin ◽

Wanjun Chen ◽

Ruize Sun ◽

Xiaochuan Deng ◽

Zhaoji Li ◽

...

Keyword(s):

High Temperature ◽

Short Channel ◽

Channel Power ◽

Gan Hemts

Single Event Burnout Hardening Technique for High-Voltage p-i-n Diodes With Field Limiting Rings Termination Structure

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3137135 ◽

2022 ◽

pp. 1-7

Author(s):

Xinfang Liao ◽

Yi Liu ◽

Changqing Xu ◽

Jing Li ◽

Yintang Yang

Keyword(s):

High Voltage ◽

Single Event

Tradeoffs With RGB-IR Image Sensors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3138381 ◽

2022 ◽

pp. 1-9

Author(s):

Orit Skorka ◽

Radu Ispasoiu

Keyword(s):

Image Sensors

From Mega to nano: Beyond one Century of Vacuum Electronics

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3133718 ◽

2022 ◽

Vol 69 (1) ◽

pp. 450-451

Keyword(s):

Vacuum Electronics

GaN High-Electron-Mobility-Transistor on Free-Standing GaN Substrate With Low Contact Resistance and State-of-the-Art ${f}_{{T}}$ x $ {L}_{{G}}$ Value

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3138954 ◽

2022 ◽

pp. 1-5

Author(s):

Hanghai Du ◽

Jincheng Zhang ◽

Hong Zhou ◽

Zhihong Liu ◽

Tao Zhang ◽

...

Keyword(s):

Contact Resistance ◽

Electron Mobility ◽

State Of The Art ◽

High Electron Mobility Transistor ◽

High Electron ◽

Free Standing ◽

High Electron Mobility ◽

G Value

Field-Effect Transistor Based on MoSi₂N₄ and WSi₂N₄ Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3138377 ◽

2022 ◽

pp. 1-7

Author(s):

Nayereh Ghobadi ◽

Manouchehr Hosseini ◽

Shoeib Babaee Touski

Keyword(s):

Electronic Properties ◽

Field Effect ◽

Field Effect Transistor ◽

Computational Study ◽

Biaxial Strain ◽

Effect Transistor

Origin of Negative Capacitance Transient in Ultrascaled Multidomain Metal-Ferroelectric-Metal Stack and Hysteresis-Free Landau Transistor

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3139057 ◽

2022 ◽

pp. 1-9

Author(s):

Khoirom Johnson Singh ◽

Anand Bulusu ◽

Sudeb Dasgupta

Keyword(s):

Negative Capacitance ◽

Capacitance Transient

Extending Channel Scaling Limit of p-MOSFETs Through Antimonene With Heavy Effective Mass and High Density of State

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3136497 ◽

2022 ◽

pp. 1-6

Author(s):

Shengli Zhang ◽

Hengze Qu ◽

Jiang Cao ◽

Yangyang Wang ◽

Shengyuan A. Yang ◽

...

Keyword(s):

Effective Mass ◽

Scaling Limit ◽

High Density ◽

Density Of State

IEEE Transactions on Electron DevicesLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Institute Of Electrical And Electronics Engineers

A New Surface Potential-Based Analytical Model for MFIS NCFETs

Static Performance and Threshold Voltage Stability Improvement of Al₂O₃/LaAlO₃/SiO₂ Gate-Stack for SiC Power MOSFETs

Barrier Lowering-Induced Capacitance Increase of Short-Channel Power p-GaN HEMTs at High Temperature

Single Event Burnout Hardening Technique for High-Voltage p-i-n Diodes With Field Limiting Rings Termination Structure

Tradeoffs With RGB-IR Image Sensors

From Mega to nano: Beyond one Century of Vacuum Electronics

GaN High-Electron-Mobility-Transistor on Free-Standing GaN Substrate With Low Contact Resistance and State-of-the-Art ${f}_{{T}}$ x $ {L}_{{G}}$ Value

Field-Effect Transistor Based on MoSi₂N₄ and WSi₂N₄ Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

Origin of Negative Capacitance Transient in Ultrascaled Multidomain Metal-Ferroelectric-Metal Stack and Hysteresis-Free Landau Transistor

Extending Channel Scaling Limit of p-MOSFETs Through Antimonene With Heavy Effective Mass and High Density of State

IEEE Transactions on Electron Devices
Latest Publications